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2010 – 2019
- 2016
[j11]Rupendra Kumar Sharma
, Charalambos A. Dimitriadis, Matthias Bucher:
A comprehensive analysis of nanoscale single- and multi-gate MOSFETs. Microelectron. J. 52: 66-72 (2016)- [j10]Ioannis Messaris, Theano A. Karatsori, Nikolaos Fasarakis, Christoforos G. Theodorou, Spiros Nikolaidis, Gérard Ghibaudo, C. A. Dimitriadis:
Hot carrier degradation modeling of short-channel n-FinFETs suitable for circuit simulators. Microelectron. Reliab. 56: 10-16 (2016) - [c12]R. Lavieville, Theano A. Karatsori, Christoforos G. Theodorou, Sylvain Barraud, C. A. Dimitriadis, Gérard Ghibaudo:
Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs. ESSDERC 2016: 142-145 - [c11]Christoforos G. Theodorou, Mouenes Fadlallah, Xavier Garros, Charalambos A. Dimitriadis, Gérard Ghibaudo:
Noise-induced dynamic variability in nano-scale CMOS SRAM cells. ESSDERC 2016: 256-259 - 2015
- [c10]Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Emmanuel Josse, Charalambos A. Dimitriadis, Gérard Ghibaudo:
New LFN and RTN analysis methodology in 28 and 14nm FD-SOI MOSFETs. IRPS 2015: 1 - 2014
- [c9]Eleftherios G. Ioannidis, Sébastien Haendler, Christoforos G. Theodorou, Nicolas Planes, C. A. Dimitriadis, Gérard Ghibaudo:
Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETs. ESSDERC 2014: 214-217 - [c8]Dimitrios H. Tassis, Ioannis Messaris, Nikolaos Fasarakis, Andreas Tsormpatzoglou, Spiros Nikolaidis, C. A. Dimitriadis:
Variability of nanoscale triple gate FinFETs: Prediction and analysis method. ICECS 2014: 710-713 - 2012
- [c7]Christoforos G. Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Franck Arnaud, Jalal Jomaah, Charalambos A. Dimitriadis, Gérard Ghibaudo:
Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs. ESSDERC 2012: 334-337 - [c6]Nikolaos Fasarakis, Andreas Tsormpatzoglou, Dimitrios H. Tassis, Konstantinos Papathanasiou, C. A. Dimitriadis, Gérard Ghibaudo:
Compact modeling for the transcapacitances of undoped or lightly doped nanoscale cylindrical surrounding gate MOSFETs. ICECS 2012: 953-956 - 2011
- [j9]N. A. Hastas, N. Arpatzanis, C. A. Dimitriadis, Julien Brochet, François Templier, G. Kamarinos:
Hysteresis effect in bottom-gate polymorphous silicon thin-film transistors. Microelectron. Reliab. 51(3): 556-559 (2011) - 2010
- [c5]Ilias Pappas, Dimitrios H. Tassis, Stilianos Siskos, Charalambos A. Dimitriadis:
Characteristics of double-gate polycrystalline silicon thin-film transistors for AMOLED pixel design. ICECS 2010: 301-304
2000 – 2009
- 2009
- [c4]Ilias Pappas, Christoforos G. Theodorou, Stylianos Siskos, Charalambos A. Dimitriadis:
A new linear voltage-to-current converter with threshold voltage compensation for analog circuits applications in polycrystalline silicon TFT process. ICECS 2009: 599-602 - 2008
- [j8]N. Arpatzanis, Argyrios T. Hatzopoulos, Dimitrios H. Tassis, C. A. Dimitriadis, François Templier, Maher Oudwan, G. Kamarinos:
Degradation of n-channel a-Si: H/nc-Si: H bilayer thin-film transistors under DC electrical stress. Microelectron. Reliab. 48(4): 531-536 (2008) - [j7]Ilias Pappas, Stilianos Siskos, Charalambos A. Dimitriadis:
A Fast and Compact Analog Buffer Design for Active Matrix Liquid Crystal Displays Using Polysilicon Thin-Film Transistors. IEEE Trans. Circuits Syst. II Express Briefs 55-II(6): 537-540 (2008) - 2006
- [j6]Nikolaos P. Papadopoulos, Alkis A. Hatzopoulos, Dimitris K. Papakostas, C. A. Dimitriadis, Stilianos Siskos:
Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region. Microelectron. J. 37(11): 1313-1320 (2006) - [j5]Argyrios T. Hatzopoulos, Dimitrios H. Tassis, N. Arpatzanis, C. A. Dimitriadis, G. Kamarinos:
Effects of hot carriers in offset gated polysilicon thin-film transistors. Microelectron. Reliab. 46(2-4): 311-316 (2006) - [j4]Dimitrios H. Tassis, Argyrios T. Hatzopoulos, N. Arpatzanis, C. A. Dimitriadis, G. Kamarinos:
Dynamic hot-carrier induced degradation in n-channel polysilicon thin-film transistors. Microelectron. Reliab. 46(12): 2032-2037 (2006) - [c3]Nikolaos P. Papadopoulos, Alkis A. Hatzopoulos, Dimitris K. Papakostas, C. A. Dimitriadis, Stilianos Siskos:
Modeling the impact of light on the performance of polycrystalline thin-film transistors at the sub-threshold region. ISCAS 2006 - [c2]Ilias Pappas, Lazaros Nalpantidis, Vasilios Kalenteridis, Stilianos Siskos, Alkis A. Hatzopoulos, C. A. Dimitriadis:
A threshold voltage variation cancellation technique for analogue peripheral circuits of a display array using poly-Si TFTs. ISCAS 2006 - 2005
- [j3]N. A. Hastas, N. Archontas, C. A. Dimitriadis, G. Kamarinos, T. Nikolaidis, N. Georgoulas, Adonios Thanailakis:
Substrate current and degradation of n-channel polycrystalline silicon thin-film transistors. Microelectron. Reliab. 45(2): 341-348 (2005) - [c1]Alkis A. Hatzopoulos, Stelios Siskos, Charalambos A. Dimitriadis, Nikolaos P. Papadopoulos:
Built-in current sensor with reduced voltage drop using thin-film transistors. ISCAS (3) 2005: 2196-2199 - 2003
- [j2]N. A. Hastas, C. A. Dimitriadis, J. Brini, G. Kamarinos, V. K. Gueorguiev, S. Kaschieva:
Effects of gamma-ray irradiation on polycrystalline silicon thin-film transistors. Microelectron. Reliab. 43(1): 57-60 (2003) - [j1]N. A. Hastas, C. A. Dimitriadis, F. V. Farmakis, G. Kamarinos:
Effects of hydrogenation on the performance and stability of p-channel polycrystalline silicon thin-film transistors. Microelectron. Reliab. 43(4): 671-674 (2003)
Coauthor Index
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