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Seung-Hyuk Kang

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affiliation: Qualcomm, San Diego, CA, USA

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2020 – today

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2021
[j24]
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Sara Choi, Hong Keun Ahn, Byungkyu Song, Seung-Hyuk Kang, Seong-Ook Jung:
Self-Referenced Single-Ended Resistance Monitoring Write Termination Scheme for STT-RAM Write Energy Reduction. IEEE Trans. Circuits Syst. I Regul. Pap. 68(6): 2481-2493 (2021)
[j23]
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Taehui Na, Seung-Hyuk Kang, Seong-Ook Jung:
STT-MRAM Sensing: A Review. IEEE Trans. Circuits Syst. II Express Briefs 68(1): 12-18 (2021)
[j22]
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Byungkyu Song, Sehee Lim, Seung-Hyuk Kang, Seong-Ook Jung:
Environmental-Variation-Tolerant Magnetic Tunnel Junction-Based Physical Unclonable Function Cell With Auto Write-Back Technique. IEEE Trans. Inf. Forensics Secur. 16: 2843-2853 (2021)

2010 – 2019

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2019
[j21]
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Byungkyu Song, Sara Choi, Seung-Hyuk Kang, Seong-Ook Jung:
Offset-Cancellation Sensing-Circuit-Based Nonvolatile Flip-Flop Operating in Near-Threshold Voltage Region. IEEE Trans. Circuits Syst. I Regul. Pap. 66-I(8): 2963-2972 (2019)
[j20]
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Sara Choi, Hong Keun Ahn, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Decoder for Short BCH Codes With High Decoding Efficiency and Low Power for Emerging Memories. IEEE Trans. Very Large Scale Integr. Syst. 27(2): 387-397 (2019)
[j19]
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Taehui Na, Byungkyu Song, Sara Choi, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS. IEEE Trans. Very Large Scale Integr. Syst. 27(11): 2548-2555 (2019)
2018
[j18]
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Taehui Na, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Data-Cell-Variation-Tolerant Dual-Mode Sensing Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. 65-I(1): 163-174 (2018)
2017
[j17]
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Taehui Na, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Offset-Canceling Current-Sampling Sense Amplifier for Resistive Nonvolatile Memory in 65 nm CMOS. IEEE J. Solid State Circuits 52(2): 496-504 (2017)
[j16]
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Byungkyu Song, Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A 10T-4MTJ Nonvolatile Ternary CAM Cell for Reliable Search Operation and a Compact Area. IEEE Trans. Circuits Syst. II Express Briefs 64-II(6): 700-704 (2017)
2016
[j15]
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Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Read Disturbance Reduction Technique for Offset-Canceling Dual-Stage Sensing Circuits in Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. II Express Briefs 63-II(6): 578-582 (2016)
[j14]
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Taehui Na, Jisu Kim, Byungkyu Song, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
An Offset-Tolerant Dual-Reference-Voltage Sensing Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24(4): 1361-1370 (2016)
[j13]
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Sara Choi, Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Corner-Aware Dynamic Gate Voltage Scheme to Achieve High Read Yield in STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24(9): 2851-2860 (2016)
[j12]
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Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Multiple-Cell Reference Scheme for Narrow Reference Resistance Distribution in Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 24(9): 2993-2997 (2016)
[c7]
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Sara Choi, Taehui Na, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Area-optimal sensing circuit designs in deep submicrometer STT-RAM. ISCAS 2016: 1246-1249
[c6]
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Beomsang Yoo, Taehui Na, Byungkyu Song, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Equalization scheme analysis for high-density spin transfer torque random access memory. ISOCC 2016: 99-100
2015
[j11]
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Byungkyu Song, Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Latch Offset Cancellation Sense Amplifier for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(7): 1776-1784 (2015)
[j10]
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Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Double-Sensing-Margin Offset-Canceling Dual-Stage Sensing Circuit for Resistive Nonvolatile Memory. IEEE Trans. Circuits Syst. II Express Briefs 62-II(12): 1109-1113 (2015)
[c5]
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Taehui Na, Hanwool Jeong, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Efficiency analysis of importance sampling in deep submicron STT-RAM design using uncontrollable industry-compatible model parameter. ICECS 2015: 400-403
[c4]
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Byungkyu Song, Taehui Na, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
Reference-circuit analysis for high-bandwidth spin transfer torque random access memory. ISLPED 2015: 365-370
2014
[j9]
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Youngdon Jung, Jisu Kim, Kyungho Ryu, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
An MTJ-based non-volatile flip-flop for high-performance SoC. Int. J. Circuit Theory Appl. 42(4): 394-406 (2014)
[j8]
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Jisu Kim, Taehui Na, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Split-Path Sensing Circuit for Spin Torque Transfer MRAM. IEEE Trans. Circuits Syst. II Express Briefs 61-II(3): 193-197 (2014)
[j7]
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Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
Reference-Scheme Study and Novel Reference Scheme for Deep Submicrometer STT-RAM. IEEE Trans. Circuits Syst. I Regul. Pap. 61-I(12): 3376-3385 (2014)
[j6]
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Taehui Na, Jisu Kim, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
An Offset-Canceling Triple-Stage Sensing Circuit for Deep Submicrometer STT-RAM. IEEE Trans. Very Large Scale Integr. Syst. 22(7): 1620-1624 (2014)
[j5]
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Jisu Kim, Kyungho Ryu, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
STT-MRAM Sensing Circuit With Self-Body Biasing in Deep Submicron Technologies. IEEE Trans. Very Large Scale Integr. Syst. 22(7): 1630-1634 (2014)
[c3]
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Taehui Na, Kyungho Ryu, Jisu Kim, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
High-performance low-power magnetic tunnel junction based non-volatile flip-flop. ISCAS 2014: 1953-1956
2013
[c2]
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Taehui Na, Kyungho Ryu, Jisu Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A comparative study of STT-MTJ based non-volatile flip-flops. ISCAS 2013: 109-112
2012
[j4]
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Jisu Kim, Kyungho Ryu, Seung-Hyuk Kang, Seong-Ook Jung:
A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM). IEEE Trans. Very Large Scale Integr. Syst. 20(1): 181-186 (2012)
[j3]
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Kyungho Ryu, Jisu Kim, Jiwan Jung, Jung Pill Kim, Seung-Hyuk Kang, Seong-Ook Jung:
A Magnetic Tunnel Junction Based Zero Standby Leakage Current Retention Flip-Flop. IEEE Trans. Very Large Scale Integr. Syst. 20(11): 2044-2053 (2012)
2011
[j2]
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Jee-Hwan Song, Jisu Kim, Seung-Hyuk Kang, Sei-Seung Yoon, Seong-Ook Jung:
Sensing margin trend with technology scaling in MRAM. Int. J. Circuit Theory Appl. 39(3): 313-325 (2011)
[c1]
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Youngdon Jung, Jisu Kim, Kyungho Ryu, Seong-Ook Jung, Jung Pill Kim, Seung-Hyuk Kang:
MTJ based non-volatile flip-flop in deep submicron technology. ISOCC 2011: 424-427
2010
[j1]
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Jisu Kim, Jee-Hwan Song, Seung-Hyuk Kang, Sei-Seung Yoon, Seong-Ook Jung:
Design Methodologies for STT-MRAM (Spin-Torque Transfer Magnetic Random Access Memory) Sensing Circuits. IEICE Trans. Electron. 93-C(6): 912-921 (2010)

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