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Dong Sam Ha
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Publications
- 2023
- [c97]Fariborz Lohrabi Pour, Dong Sam Ha:
2.4 GHz Ultra-Low Power Direct Digital-to-RF CMOS Transmitter for Biosensing Applications. BioCAS 2023: 1-5 - [c96]Fariborz Lohrabi Pour, Dong Sam Ha:
Effect of Power Conversion Efficiency of the RF Energy Harvester on the Security and Data Rate of the Self-Sustainable IoT Devices. EICC 2023: 121-124 - [c94]Seyed Hossein Hosseini, Jack Greer, Fariborz Lohrabi Pour, Dong Sam Ha:
Powerline Energy Harvesting with Maximum Power Point Tracking for a Wide Current Range. ISCAS 2023: 1-5 - [c93]Fariborz Lohrabi Pour, Harrison Williams, Matthew Hicks, Dong Sam Ha:
RF Energy Harvesting in Minimization of Age of Information with Updating Erasures. ISCAS 2023: 1-5 - 2022
- [j33]Jebreel M. Salem, Fariborz Lohrabi Pour, Dong Sam Ha:
High temperature RF transceiver design for high-speed downhole communications. Microelectron. J. 129: 105609 (2022) - [c90]Rajesh Kudupudi, Fariborz Lohrabi Pour, Dong Sam Ha, Sook Shin Ha, Keyvan Ramezanpour:
Analysis of Deep Learning Models Towards High Performance Digital Predistortion for RF Power Amplifiers. ISCAS 2022: 1309-1313 - [c89]Abhishek Priyadarshan Damle, Sook Shin Ha, Zhuqing Zhao, Barbara Roqueto dos Reis, Robin White, Dong Sam Ha:
Power Efficient Wireless Sensor Node through Edge Intelligence. ISCAS 2022: 1749-1753 - [c88]Fariborz Lohrabi Pour, Dong Sam Ha:
An M-PSK Modulated Polar Transmitter Based on a Ring Oscillator with Low Power and Low Design Complexity for IoT Applications. ISCAS 2022: 2182-2186 - 2021
- [j31]Joseph Chong, Fariborz Lohrabi Pour, Dong Sam Ha:
A 0.13-μm CMOS resonator-based frequency-doubling mechanism for clock recovery in a full-rate 40 Gb/s optical receiver. Microelectron. J. 114: 105137 (2021) - [j30]Joseph Chong, Fariborz Lohrabi Pour, Dong Sam Ha:
Input-resistance reduced gm-boosted common-gate transimpedance amplifier for 100 Gb/s optical communication. Microelectron. J. 114: 105155 (2021) - [j29]Jebreel M. Salem, Fariborz Lohrabi Pour, Dong Sam Ha:
A High-Temperature Model for GaN-HEMT Transistors and its Application to Resistive Mixer Design. IEEE Trans. Circuits Syst. I Regul. Pap. 68(2): 581-591 (2021) - [c86]Fariborz Lohrabi Pour, Dong Sam Ha:
A Temperature Compensated Variable Gain Phase Shifter Based on GaN HEMTs. ISCAS 2021: 1-5 - [c85]Ryan Reed, Fariborz Lohrabi Pour, Dong Sam Ha:
An Energy Efficient RF Backscatter Modulator for IoT Applications. ISCAS 2021: 1-5 - [c82]Ryan Reed, Fariborz Lohrabi Pour, Dong Sam Ha:
Design of a Multi-Tone Wireless Power Transmitter Using Second Harmonic Extraction of a Voltage-Controlled Oscillator. MWSCAS 2021: 894-898 - 2020
- [j28]Nathan Turner, Fariborz Lohrabi Pour, Dong Sam Ha:
Design of a High Temperature 2.37 GHz Voltage-Controlled Oscillator With GaN-on-SiC HEMTs. IEEE Trans. Circuits Syst. 67-I(12): 5153-5161 (2020) - [c78]Ryan Reed, Fariborz Lohrabi Pour, Dong Sam Ha:
An Efficient 2.4 GHz Differential Rectenna for Radio Frequency Energy Harvesting. MWSCAS 2020: 208-212 - [c77]Fariborz Lohrabi Pour, Dong Sam Ha:
A Temperature Compensated 5 GHz GaN on SiC Power Amplifier. MWSCAS 2020: 549-553 - 2019
- [c73]Brannon Kerrigan, Fariborz Lohrabi Pour, Dong Sam Ha:
System Design of a High-Temperature Downhole Transceiver: Part I - Receiver. MWSCAS 2019: 818-821 - [c72]Brannon Kerrigan, Fariborz Lohrabi Pour, Dong Sam Ha:
System Design of a High-Temperature Downhole Transceiver: Part II - Transmitter. MWSCAS 2019: 822-825 - 2017
- [c66]Mohammed Ehteshamuddin, Jebreel M. Salem, Dong Sam Ha:
A high temperature variable gain amplifier based on GaN HEMT devices for downhole communications. ISCAS 2017: 1-4 - [c65]Tianming Feng, Jebreel M. Salem, Dong Sam Ha:
High temperature VCO based on GaN devices for downhole communications. ISCAS 2017: 1-4 - [c61]Joseph Chong, Dong Sam Ha:
A full-rate 40 Gb/s clock and data recovery with resonator-based frequency-doubling mechanism in 0.13-μm CMOS. MWSCAS 2017: 1438-1441 - 2016
- [j23]Jebreel M. Salem, Dong Sam Ha:
Dual Use of Power Lines for Design-for-Testability - A CMOS Receiver Design. IEEE Trans. Very Large Scale Integr. Syst. 24(3): 1118-1125 (2016) - [c59]Jebreel M. Salem, Dong Sam Ha:
A high temperature active GaN-HEMT downconversion mixer for downhole communications. ISCAS 2016: 946-949 - 2015
- [c56]Joseph Chong, Dong Sam Ha:
A 100 Gb/s transimpedance amplifier with diode-connecting input-resistance-reduction in 32 nm CMOS technology. MWSCAS 2015: 1-4 - 2014
- [c53]Maruf N. Ahmed, Joseph Chong, Dong Sam Ha:
A 100 Gb/s transimpedance amplifier in 65 nm CMOS technology for optical communications. ISCAS 2014: 1885-1888 - 2012
- [c50]Jebreel M. Salem, Dong Sam Ha:
A robust receiver for power line communications in integrated circuits. MWSCAS 2012: 254-257 - [c49]John Turner, Maruf N. Ahmed, Dong Sam Ha, Paolo Mattavelli:
A new approach to the wide bandwidth of piezoelectric transducers for vibration energy harvesting. MWSCAS 2012: 1064-1067
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