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ORCIDMicroelectronics Journal, Volume 140
Volume 140, October 2023
- Qiuyue Zhang, Xuqiang Zheng, Fangxu Lv, Zhaoyang Liu, Hua Xu, Weijie Li, Zhi Jin, Mingche Lai, Xinyu Liu:
A 50 Gb/s PAM-4 EAM driver in 28-nm CMOS technology. 105905
- Yu Qi
, Michael Kines, Samuel Ellicott, Waleed Khalil, Hossein Miri Lavasani:
A 2.4 GHz low-power and compact 3-bit active phase shifter utilizing miller capacitance. 105914
- Harshit Kansal, Aditya Sankar Medury:
Engineering negative capacitance Fully Depleted Silicon-on-insulator FET for improved performance. 105917 - Qiuwei Wang, Mao Ye, Yao Li, Xiaoxiao Zheng, Yiqiang Zhao:
A high area-and-energy efficiency 12-bit column-parallel SAR/SS ADC for high-speed infrared focal plane readout circuits with error correction. 105918 - Xiaole Jia, Yibo Wang, Jinyu Yang, Yan Liu, Yue Hao, Genquan Han:
A compact model of DC I-V characteristics for depleted Ga2O3 MOSFETs. 105920 - Yike Wang, Yuyao Qi, Xiudeng Wang, Yinshui Xia:
A self-powered extensible P-SSHI array interface circuit with thermoelectric energy assistance for piezoelectric energy harvesting. 105921 - R. Sobhy, R. Khalil:
Carrier transport and Negative differential resistance of electrically bipolar devices based on poly(3,4-ethylene-dioxythiophene): Poly (styrene sulfonate) film. 105922 - B. Mounika, J. Ajayan, Sandip Bhattacharya, D. Nirmal, V. Bharath Sreenivasulu, N. Aruna Kumari:
Investigation on effect of AlN barrier thickness and lateral scalability of Fe-doped recessed T-gate AlN/GaN/SiC HEMT with polarization-graded back barrier for future RF electronic applications. 105923 - Li Wang, Dehai Zhang, Jin Meng, Haomiao Wei:
A high efficiency and high power 165-180 GHz balanced doubler based on Schottky diode. 105924 - Xiwen Zhu, Mingxue Li, Yufeng Zhang:
A weak current detection circuit with LDO for electrochemical sensors. 105925 - Chunxiao Zhao, Ni Zeng, Bingzhi Zou, Qiao Sun, Jinyi Wang, Kejun Wei, Zeyu Huang, Tiankai Wang, Jingjing Lin, Yian Yin:
AlGaN/GaN HEMTs with a magnetron-sputtered AlN buffer layer. 105926 - Sandeep Kumar, Atin Mukherjee:
High performance radiation-hardened SRAM cell design for robust applications. 105934 - Dongwei Pang, Lingling Wei, Shiwei Wu, Biao Deng, Yongfeng Gui, Zongming Duan, Gang Wang:
A ku-band common-leg transceiver with built-in configurable register in 130-nm CMOS technology for phased-array systems. 105939 - Sharmila B, Ashutosh Kumar Dikshit, Priyanka Dwivedi:
Role of etching parameters on the performance of porous silicon based photodetector devices. 105940 - Dayasagar Chowdary S, M. S. Sudhakar:
Multi-objective Floorplanning optimization engaging dynamic programming for system on chip. 105942 - Shengyao Jia, Chuanjun Zeng, Ge Shi, Chunbo Hong, Jianqiang Han, Yinshui Xia:
A self-powered synchronous magnetic flux extraction interface for electromagnetic energy harvesting. 105943 - C. Sivamani, P. Murugapandiyan, A. Mohanbabu, A. S. Augustine Fletcher:
High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: A simulation study. 105946 - Xiaoxiao Zheng, Mao Ye, Qiuwei Wang, Yao Li, Yiqiang Zhao:
A fully differential wideband analog front end for FMCW LiDAR application. 105948 - Anum Khan, Arindom Chakraborty, Upal Barua Joy, Subodh Wairya, Mehedi Hasan:
Carry look-ahead and ripple carry method based 4-bit carry generator circuit for implementing wide-word length adder. 105949 - J. S. Raj Kumar, H. Victor Du John, Binola K. Jebalin, J. Ajayan, Angelin Delighta A, D. Nirmal:
A comprehensive review of AlGaN/GaN High electron mobility transistors: Architectures and field plate techniques for high power/ high frequency applications. 105951
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