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ORCIDMicroelectronics Reliability, Volume 43
Volume 43, Number 1, January 2003
- Harry A. Schafft, Linda M. Head, Jason Gill, Timothy D. Sullivan:
Early reliability assessment by using deep censoring. 1-16 - Michael W. Ruprecht, Guenther Benstetter
, Douglas B. Hunt:
A review of ULSI failure analysis techniques for DRAMs. Part II: Defect isolation and visualization. 17-41 - C.-T. Wu, A. Mieckowski, R. S. Ridley, G. Dolny, T. Grebs, J. Linn, Jerzy Ruzyllo:
Effect of nitridation on the reliability of thick gate oxides. 43-47 - Emil V. Jelenkovic, K. Y. Tong, Wai Yuen Cheung, S. P. Wong:
Degradation of RuO2 thin films in hydrogen atmosphere at temperatures between 150 and 250 degreeC. 49-55 - N. A. Hastas, C. A. Dimitriadis, J. Brini, G. Kamarinos, V. K. Gueorguiev, S. Kaschieva:
Effects of gamma-ray irradiation on polycrystalline silicon thin-film transistors. 57-60 - Vladislav A. Vashchenko, Ann Concannon, Marcel ter Beek, P. Hopper:
LVTSCR structures for latch-up free ESD protection of BiCMOS RF circuits. 61-69 - David Trémouilles, Géraldine Bertrand, Marise Bafleur, Felix Beaudoin, Philippe Perdu, Nicolas Guitard, Lionel Lescouzères:
TCAD and SPICE modeling help solve ESD protection issues in analog CMOS technology. 71-79 - Paolo Cova, Roberto Menozzi, Marco Portesine:
Power p-i-n diodes for snubberless application: H+ irradiation for soft and reliable reverse recovery. 81-87 - Stéphane Forster, Thierry Lequeu, Robert Jérisian:
Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3. 89-98 - G. Romo, Tom J. Smy, David J. Walkey, B. Reid:
Modeling facet heating in ridge lasers. 99-110 - A. Cazarré, F. Lépinois, A. Marty, S. Pinel, J. Tasselli, J. P. Bailbé, J. R. Morante, F. Murray:
Electrical qualification of new ultrathin integration techniques. 111-115 - M. Karilahti:
Neural net analysis of integrated circuit yield dependence on CMOS process control parameters. 117-121 - Kuo-Ming Chen, Kuo-Ning Chiang:
Impact of probing procedure on flip chip reliability. 123-130 - Chi-Hui Chien, Yung-Chang Chen, Yii-Tay Chiou, Thaiping Chen, Chi-Chang Hsieh, Jia-Jin Yan, Wei-Zhi Chen, Yii-Der Wu:
Influences of the moisture absorption on PBGA package's warpage during IR reflow process. 131-139 - Harry K. Charles Jr., K. J. Mach, S. J. Lehtonen, Arthur S. Francomacaro, J. S. DeBoy, R. L. Edwards:
Wirebonding at higher ultrasonic frequencies: reliability and process implications. 141-153 - Thomas D. Moore, John L. Jarvis:
Thermomechanical deformation of a bimaterial plate--as applied to laminate IC assemblies. 155-162 - David C. T. Or, Pui-To Lai, Johnny K. O. Sin, Paul C. K. Kwok, Jing-Ping Xu:
Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation. 163-166 - Roland Sorge:
Implant dose monitoring by MOS C-V measurement. 167-171 - Thomas Beauchêne, Dean Lewis, Felix Beaudoin, Vincent Pouget, Philippe Perdu, Pascal Fouillat, Yves Danto:
A physical approach on SCOBIC investigation in VLSI. 173-177
Volume 43, Number 2, February 2003
- H. E. Aldrete-Vidrio, J. L. del Valle, J. Santana-Corte:
A TCAD comparative study of power rectifiers: modified P-i-N vs. modified mosaic contact P-i-N diode. 181-188 - Magali Estrada, A. Afzalian, Denis Flandre, Antonio Cerdeira, Héctor Báez-Medina, A. de Lucca:
FD MOS SOI circuit to enhance the ratio of illuminated to dark current of a co-integrated a-Si: H photodiode. 189-193 - Roberto S. Murphy-Arteaga, Jesus Huerta-Chua, Alejandro Díaz-Sánchez, Alfonso Torres-Jácome, Wilfrido Calleja Arriaga, M. Landa-Vázquez:
Fabrication, characterisation and modelling of integrated on-silicon inductors. 195-201 - Javier Lemus-López, Alejandro Díaz-Sánchez, Jaime Ramírez-Angulo:
An analog median filter with fuzzy adaptation. 203-207 - Duarte Lopes de Oliveira, Marius Strum, Jiang Chau Wang, Wagner Chiepa Cunha:
Miriã: a CAD tool to synthesize multi-burst controllers for heterogeneous systems. 209-215 - Deni Torres, A. Redondo, M. E. Guzmán:
MSOH processor for STM-0/STS-1 to STM-4/STS-12: component of a SDH/SONET library. 217-223 - Sima Dimitrijev, Philippe Jamet:
Advances in SiC power MOSFET technology. 225-233 - M. Pecovska-Gjorgjevich, Nenad Novkovski, Elena Atanassova:
Electrical properties of thin RF sputtered Ta2O5 films after constant current stress. 235-241 - François Dieudonné, Sébastien Haendler, Jalal Jomaah, Francis Balestra:
Low frequency noise in 0.12 mum partially and fully depleted SOI technology. 243-248 - Paul Isaac Hagouel:
Blazed diffraction gratings fabricated using X-ray lithography: fabrication, modeling and simulation. 249-258 - K. S. Kim, S. H. Huh, K. Suganuma:
Effects of fourth alloying additive on microstructures and tensile properties of Sn-Ag-Cu alloy and joints with Cu. 259-267 - J. D. Wu, C. Y. Huang, C. C. Liao:
Fracture strength characterization and failure analysis of silicon dies. 269-277 - C. W. Tan, Y. C. Chan, N. H. Yeung:
Effect of autoclave test on anisotropic conductive joints. 279-285 - Ajit R. Dhamdhere, Ajay P. Malshe, William F. Schmidt, William D. Brown:
Investigation of reliability issues in high power laser diode bar packages. 287-295 - Paiboon Tangyunyong:
Thermal modeling of localized laser heating in multi-level interconnects. 297-305 - Bart Vandevelde, Dominiek Degryse, Eric Beyne, Eric Roose, Dorina Corlatan, Guido Swaelen, Geert Willems, Filip Christiaens, Alcatel Bell, Dirk Vandepitte:
Modified micro-macro thermo-mechanical modelling of ceramic ball grid array packages. 307-318 - Sasa A. Jankovic, Dejan M. Maksimovic:
Power saving modes in modern microcontroller design, diagnostics and reliability. 319-326 - M. M. Shahidul Hassan:
Base transit time of an epitaxial n+pn-n+ bipolar transistor considering Kirk effect. 327-332 - Sadegh Abbasian, Ebrahim Farjah:
A new drain current model for short-channel MOSFETs. 333-338 - Keiji Takagi:
A study on 1/f noise spectrum generation in nonlinear transmission media and biomedical systems. 339-342
Volume 43, Number 3, March 2003
- Andrzej Dziedzic:
Special Section on IMAPS-Europe 2002. 343 - Jürgen Wilde, Yuqing Lai:
Design optimization of an eddy current sensor using the finite-elements method. 345-349 - Arun Chandrasekhar, Steven Brebels, Serguei Stoukatch, Eric Beyne, Walter De Raedt, Bart Nauwelaers:
The influence of packaging materials on RF performance. 351-357 - Jürgen Schulz-Harder:
Advantages and new development of direct bonded copper substrates. 359-365 - Guo Lihui, Yu Mingbin, Foo Pang Dow:
RF inductors and capacitors integrated on silicon chip by CMOS compatible Cu interconnect technology. 367-370 - J. Müller, J. Klein, J. Rayho:
In-process verification of MLC substrates. 371-375 - Andrzej Dziedzic, Lars Rebenklau, Leszek J. Golonka, Klaus-Jürgen Wolter:
Fodel microresistors-processing and basic electrical properties. 377-383 - Kinam Kim, Yoon-Jong Song:
Integration technology for ferroelectric memory devices. 385-398 - Mansun Chan, Xuemei Xi, Jin He, Kanyu M. Cao, Mohan V. Dunga, Ali M. Niknejad, Ping K. Ko, Chenming Hu:
Practical compact modeling approaches and options for sub-0.1 mum CMOS technologies. 399-404 - Handoko Linewih, Sima Dimitrijev, Kuan Yew Cheong:
Channel-carrier mobility parameters for 4H SiC MOSFETs. 405-411 - Salvador Hidalgo, David Flores, Isabel Obieta, I. Mazarredo:
Passivation and packaging of positive bevelled edge termination and related electrical stability. 413-420 - Yang-Hua Chang, Chen-Chun Chang-Chiang, Yueh-Cheng Lee, Chi-Chung Liu:
Design of multi-finger HBTs with a thermal-electrical model. 421-426 - Vladislav A. Vashchenko, Ann Concannon, Marcel ter Beek, P. Hopper:
Quasi-3D simulation approach for comparative evaluation of triggering ESD protection structures. 427-437 - Thomas Beauchêne, Dean Lewis, Felix Beaudoin, Vincent Pouget, Romain Desplats, Pascal Fouillat, Philippe Perdu, Marise Bafleur, David Trémouilles:
Thermal laser stimulation and NB-OBIC techniques applied to ESD defect localization. 439-444 - Petteri Palm, Jarmo Määttänen, Yannick De Maquillé, Alain Picault, Jan Vanfleteren, Björn Vandecasteele:
Comparison of different flex materials in high density flip chip on flex applications. 445-451 - R. K. Shiue, L. W. Tsay, C. L. Lin, J. L. Ou:
The reliability study of selected Sn-Zn based lead-free solders on Au/Ni-P/Cu substrate. 453-463 - Yuko Sawada, Kozo Harada, Hirofumi Fujioka:
Study of package warp behavior for high-performance flip-chip BGA. 465-471 - Hirokazu Ezawa, Masaharu Seto, Masahiro Miyata, Hiroshi Tazawa:
Polymer film deposition with fine pitch openings by stencil printing. 473-479 - C. W. Tan, Y. C. Chan, N. H. Yeung:
Behaviour of anisotropic conductive joints under mechanical loading. 481-486 - Thomas D. Moore, John L. Jarvis:
A simple and fundamental design rule for resisting delamination in bimaterial structures. 487-494 - Wen Lea Pearn, Ming-Hung Shu:
An algorithm for calculating the lower confidence bounds of CPU and CPL with application to low-drop-out linear regulators. 495-502 - Takeshi Yanagisawa, Takeshi Kojima:
The stability of the CuInSe2 solar mini-module I-V characteristics under continuous and light/dark irradiation cycle tests. 503-507 - Gady Golan, Alex Axelevitch, B. Sigalov, B. Gorenstein:
Integrated thin film heater-thermocouple systems. 509-512 - Mile K. Stojcev:
Memory Design Techniques for Low Energy Embedded Systems; Alberto Macii, Luca Benini, Massimo Poncino. Kluwer Academic Publishers, Boston, USA, 2002. Hard cover, pp 144 plus XI, ISBN 0-7923-7690-0. 513 - Mile K. Stojcev:
A designer's guide to built-in self-test; Charles E. Stround. Kluwer Academic Publishers, Boston, 2002. Hardcover, pp 319, plus XVI, ISBN 1-4020-7050-0. 514-515 - Mile K. Stojcev:
Semiconductor Memories: Technologies, Testing and Reliability; Ashok K. Sharma. IEEE Press and Wiley Interscience, New York, 1997. Hardcover, pp 462, plus XII, ISBN 0-7803-1000-4. 515
Volume 43, Number 4, April 2003
- Vitezslav Benda:
The quest for optimum technology of power semiconductor devices. 517 - Noel Y. A. Shammas:
Present problems of power module packaging technology. 519-527 - Josef Lutz, Martin Domeij:
Dynamic avalanche and reliability of high voltage diodes. 529-536 - J. Vobecký, Pavel Hazdra, V. Záhlava:
Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode. 537-544 - M. Blaho, Dionyz Pogany, Erich Gornik, Marie Denison, Gerhard Groos, Matthias Stecher:
Study of internal behavior in a vertical DMOS transistor under short high current stress by an interferometric mapping method. 545-548 - Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Candelori:
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact, . 549-555 - Václav Papez, B. Kojecký, J. Kozísek, J. Hejhal:
Transient effects on high voltage diode stack under reverse bias. 557-564 - B. Morillon, Jean-Marie Dilhac, Christian Ganibal, C. Anceau:
Study of aluminum thermomigration as a low thermal budget technique for innovative power devices. 565-569 - Adeline Feybesse, Ivana Deram, Jean-Michel Reynes, Eric Moreau:
Copper metallization influence on power MOS reliability. 571-576 - Giovanni Busatto, Roberto La Capruccia, Francesco Iannuzzo, Francesco Velardi, Roberto Roncella:
MAGFET based current sensing for power integrated circuit. 577-583 - Hei Wong:
Low-frequency noise study in electron devices: review and update. 585-599 - Minkyu Je, Jeonghu Han, Hyungcheol Shin, Kwyro Lee:
A simple four-terminal small-signal model of RF MOSFETs and its parameter extraction. 601-609 - Jackie Chan, Hei Wong, M. C. Poon, Chi-Wah Kok:
Oxynitride gate dielectric prepared by thermal oxidation of low-pressure chemical vapor deposition silicon-rich silicon nitride. 611-616 - S. K. Manhas, D. Chandra Sekhar, A. S. Oates, Merlyne M. De Souza:
Characterisation of series resistance degradation through charge pumping technique. 617-624 - Chunyan Yin, M. O. Alam, Yan Cheong Chan, Chris Bailey, Hua Lu:
The effect of reflow process on the contact resistance and reliability of anisotropic conductive film interconnection for flip chip on flex applications. 625-633 - C. Hillman, B. Castillo, Michael G. Pecht:
Diffusion and absorption of corrosive gases in electronic encapsulants. 635-643 - Pekka Heino, Eero Ristolainen:
Strength of Ta-Si interfaces by molecular dynamics. 645-650 - Wen Lea Pearn, G. H. Lin:
A reliable procedure for testing linear regulators with one-sided specification limits based on multiple samples. 651-664 - V. A. Gritsenko, A. V. Shaposhnikov, Yu. N. Novikov, A. P. Baraban, Hei Wong, G. M. Zhidomirov, M. Roger:
Onefold coordinated oxygen atom: an electron trap in the silicon oxide. 665-669 - N. A. Hastas, C. A. Dimitriadis, F. V. Farmakis, G. Kamarinos:
Effects of hydrogenation on the performance and stability of p-channel polycrystalline silicon thin-film transistors. 671-674 - Z. Synowiec, B. Paszkiewicz:
Electron transport in implant isolation GaAs layers. 675-679 - Johan Liu:
Foldable Flex and Thinned Silicon Chips for Multichip Packaging; John Balde (Ed.), Kluwer Academic Publishers, Boston, USA, December 2002. Hardbound, 340 pp, Number of figures and tables 200, ISBN 0-7923-7676-5. 681-683 - Mile K. Stojcev:
System Design with System C; Thorsten Grotker, Stan Liao, Grant Martin, Stuart Swan. Kluwer Academic Publishers, Boston, 2002. Hardcover, pp 217, plus X, ISBN 1-4020-7027-1. 683-684
Volume 43, Number 5, May 2003
- Mark Zwolinski, Manoj Singh Gaur:
Integrating testability with design space exploration. 685-693 - Reza Ghaffarian:
Qualification approaches and thermal cycle test results for CSP/BGA/FCBGA. 695-706 - Ru Huang, Jinyan Wang, Jin He, Min Yu, Xing Zhang, Yangyuan Wang:
Hot carrier degradation behavior in SOI dynamic-threshold-voltage nMOSFET's (n-DTMOSFET) measured by gated-diode configuration. 707-711 - Summer F. C. Tseng, Wei-Ting Kary Chien, Bing-Chu Cai:
Improvement of poly-silicon hole induced gate oxide failure by silicon rich oxidation. 713-724 - Xiaofang Gao, Juin J. Liou, Joe Bernier, Gregg D. Croft, Waisum Wong, Satya Vishwanathan:
Optimization of on-chip ESD protection structures for minimal parasitic capacitance. 725-733 - Chihoon Lee, Donggun Park, Hyeong Joon Kim, Wonshik Lee:
Electrical reliability of highly reliable 256M-bit mobile DRAM with top-edge round STI and dual gate oxide. 735-739 - Tong Yan Tee, Chek Lim Kho, Daniel Yap, Carol Toh, Xavier Baraton, Zhaowei Zhong:
Reliability assessment and hygroswelling modeling of FCBGA with no-flow underfill. 741-749 - Qian Wang, Naoe Hosoda, Toshihiro Itoh, Tadatomo Suga:
Reliability of Au bump-Cu direct interconnections fabricated by means of surface activated bonding method. 751-756 - Kyung-Seob Kim, C. H. Yu, Nam-Hoon Kim, N. K. Kim, H. J. Chang, E. G. Chang:
Isothermal aging characteristics of Sn-Pb micro solder bumps. 757-763 - W. D. van Driel, G. Q. Zhang, J. H. J. Janssen, Leo J. Ernst, Fei Su, Kerm Sin Chian, Sung Yi:
Prediction and verification of process induced warpage of electronic packages. 765-774 - Ping Zhao, Michael G. Pecht:
Field failure due to creep corrosion on components with palladium pre-plated leadframes. 775-783 - Sam Z. Zhao:
Thermal design of a broadband communication system with detailed modeling of TBGA packages. 785-793 - Vencislav C. Valchev, Alex Van den Bossche:
Accurate natural convection modelling for magnetic components. 795-802 - T. Y. Lin, K. L. Davison, W. S. Leong, Simon Chua, Y. F. Yao, J. S. Pan, J. W. Chai, K. C. Toh, W. C. Tjiu:
Surface topographical characterization of silver-plated film on the wedge bondability of leaded IC packages. 803-809 - T. Y. Lin, C. M. Fang, Y. F. Yao, K. H. Chua:
Development of the green plastic encapsulation for high density wirebonded leaded packages. 811-817 - Mile K. Stojcev:
High Performance Memory Testing: Design Principles, Fault Modeling and Self-Test; R. Dean Adams, Kluwer Academic Publishers, Boston, 2003, Hardcover, pp 247, plus XIII, ISBN 1-4020-7255-4. 819
Volume 43, Number 6, June 2003
- Wallace T. Anderson, Roberto Menozzi:
Editorial. 821 - Hyungtak Kim, Alexei Vertiatchikh, Richard M. Thompson, Vinayak Tilak, Thomas R. Prunty, James R. Shealy, Lester F. Eastman:
Hot electron induced degradation of undoped AlGaN/GaN HFETs. 823-827 - Frank Gao:
High reliability in PHEMT MMICs with dual-etch-stop AlAs layers for high-speed RF switch applications. 829-837 - Frank Brunner, A. Braun, Paul Kurpas, J. Schneider, Joachim Würfl, Markus Weyers:
Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE. 839-844 - William J. Rowe, Bruce M. Paine, Adele E. Schmitz, Robert H. Walden, Michael J. Delaney:
Reliability of 100 nm silicon nitride capacitors in an InP HEMT MMIC process. 845-851 - Bruce M. Paine, Ami P. Shah, Thomas Rust:
The effects of ternary alloys on thermal resistances of HBTs, HEMTs, and laser diodes. 853-858 - Charles S. Whitman:
Accelerated life test calculations using the method of maximum likelihood: an improvement over least squares. 859-864 - Rolf-Peter Vollertsen:
Thin dielectric reliability assessment for DRAM technology with deep trench storage node. 865-878 - John J. H. Reche, Deok-Hoon Kim:
Wafer level packaging having bump-on-polymer structure. 879-894 - Julio C. Tinoco, Magali Estrada, G. Romero:
Room temperature plasma oxidation mechanism to obtain ultrathin silicon oxide and titanium oxide layers. 895-903 - Ivanka P. Stanimirovic, Milan Jevtic, Zdravko I. Stanimirovic:
High-voltage pulse stressing of thick-film resistors and noise. 905-911 - Hong Meng Ho, Wai Lam, Serguei Stoukatch, Petar Ratchev, Charles J. Vath, Eric Beyne:
Direct gold and copper wires bonding on copper. 913-923 - Po-Jen Zheng, J. Z. Lee, K. H. Liu, J. D. Wu, S. C. Hung:
Solder joint reliability of TFBGA assemblies with fresh and reworked solder balls. 925-934 - D. S. Liu, Y. C. Chao, C. H. Lin, G. S. Shen, H. S. Liu:
Numerical study on the bonding tool position, tip profile and planarity angle influences on TAB/ILB interconnection reliability. 935-943 - Dominik Kasprowicz, Witold A. Pleskacz:
Improvement of integrated circuit testing reliability by using the defect based approach. 945-953 - Belén Calvo, Santiago Celma, Pedro A. Martínez, Maria Teresa Sanz:
Novel high performance CMOS current conveyor. 955-961