Microelectronics Reliability, Volumes 88-90

Volumes 88-90, September 2018

29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ( ESREF 2018 )

• 
  Mauro Ciappa, Paolo Cova, Gaudenzio Meneghesso, Francesco Iannuzzo:
  Editorial. 1
• 
  Wen-Chieh Chen, Ming-Dou Ker:
  Surge protection design with surge-to-digital converter for microelectronic circuits and systems. 2-5
• 
  Hassen Aziza, Basma Hajri, Mohammad M. Mansour, Ali Chehab, Annie Pérez:
  A lightweight write-assist scheme for reduced RRAM variability and power. 6-10
• 
  Ivo Vogt, Tomonori Nakamura, B. Motamedi, Christian Boit:
  Device characterization of 16/14 nm FinFETs for reliability assessment with infrared emission spectra. 11-15
• 
  M. Unterreitmeier, O. Nagler, L. Pfitzner, Robert Weigel, R. Holmer:
  An acoustic emission sensor system for thin layer crack detection. 16-21
• 
  Elham Amini, Anne Beyreuther, Norbert Herfurth, Alexander Steigert, R. Muydinov, Bernd Szyszka, Christian Boit:
  IC security and quality improvement by protection of chip backside against hardware attacks. 22-25
• 
  Giovanna Mura:
  Reliability concerns from the gray market. 26-30
• 
  Michal Baszynski, P. Rydygier, Mariusz Wojcik:
  Experimental studies of: Laminate composition, drill bit wear out, and chloride ion concentration as factors affecting CAF formation rate. 31-37
• 
  Sebastián Matías Pazos, Fernando L. Aguirre, Felix Palumbo, Fernando Silveira:
  Performance-reliability trade-offs in short range RF power amplifier design. 38-42
• 
  Nick Baker, Francesco Iannuzzo:
  Smart SiC MOSFET accelerated lifetime testing. 43-47
• 
  Bahar Ahmadi, Pouya Tavousi, Joseph Favata, Peiman Shahbeigi-Roodposhti, Rengarajan Pelapur, Sina Shahbazmohamadi:
  A novel crowdsourcing platform for microelectronics counterfeit defect detection. 48-53
• 
  Abdellatif Bey-Temsamani, S. Kauffmann, Stijn Helsen, T. Gaens, V. Driesen:
  Physics-of-Failure (PoF) methodology for qualification and lifetime assessment of supercapacitors for industrial applications. 54-60
• 
  Julien Coutet, François Marc, Flavien Dozolme, Romain Guétard, Aurélien Janvresse, Pierre Lebossé, Antonin Pastre, Jean-Claude Clement:
  Influence of temperature of storage, write and read operations on multiple level cells NAND flash memories. 61-66
• 
  Morgane Mousnier, Kévin Sanchez, Elsa Locatelli, Thierry Lebey, Vincent Bley:
  Lock-in thermography for defect localization and thermal characterization for space application. 67-74
• 
  Mingyao Ma, Kaiqi Chu, Mingyue Zhan, Ye Wang, Fang Liu:
  Statistical analysis of characteristic of ageing precursor of IGBT based on synthetic effect of multi-physical fields. 75-79
• 
  Pham Luu Trung Duong, Hyunseok Park, Nagarajan Raghavan:
  Application of multi-output Gaussian process regression for remaining useful life prediction of light emitting diodes. 80-84
• 
  Pham Luu Trung Duong, Xuechu Xu, Qing Yang, Nagarajan Raghavan:
  Gaussian process regression approach for robust design and yield enhancement of self-assembled nanostructures. 85-90
• 
  G. Prathiba, M. Santhi, A. Ahilan:
  Design and implementation of reliable flash ADC for microwave applications. 91-97
• 
  O. Dixon-Luinenburg, J. Fine:
  In-situ transistor reliability measurements through nanoprobing. 98-102
• 
  Xiaoman Sun, Meng Huang, Yi Liu, Xiaoming Zha:
  Investigation of artificial neural network algorithm based IGBT online condition monitoring. 103-106
• 
  Xuerong Ye, Yigang Lin, Qingmin Wang, Hao Niu, Guofu Zhai:
  Manufacturing process-based storage degradation modelling and reliability assessment. 107-110
• 
  Alexandra L. Zimpeck, Cristina Meinhardt, Laurent Artola, Guillaume Hubert, Fernanda Lima Kastensmidt, Ricardo Augusto da Luz Reis:
  Impact of different transistor arrangements on gate variability. 111-115
• 
  Leonardo B. Moraes, Alexandra L. Zimpeck, Cristina Meinhardt, Ricardo Augusto da Luz Reis:
  Evaluation of variability using Schmitt trigger on full adders layout. 116-121
• 
  Thiago Ferreira de Paiva Leite, Laurent Fesquet, Rodrigo Possamai Bastos:
  A body built-in cell for detecting transient faults and dynamically biasing subcircuits of integrated systems. 122-127
• 
  Raphael Andreoni Camponogara Viera, Jean-Max Dutertre, Marie-Lise Flottes, Olivier Potin, Giorgio Di Natale, Bruno Rouzeyre, Rodrigo Possamai Bastos:
  Assessing body built-in current sensors for detection of multiple transient faults. 128-134

Si Technologies & Nanoelectronics: Hot Carriers, High K, Gate Materials

• 
  Ninoslav Stojadinovic, Snezana Djoric-Veljkovic, Vojkan Davidovic, Snezana Golubovic, Srboljub Stankovic, Aneta Prijic, Zoran Prijic, Ivica Manic, Danijel Dankovic:
  NBTI and irradiation related degradation mechanisms in power VDMOS transistors. 135-141
• 
  A. Rodriguez-Fernandez, J. Muñoz-Gorriz, Jordi Suñé, Enrique Miranda:
  A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory. 142-146
• 
  Maurits J. de Jong, Cora Salm, Jurriaan Schmitz:
  Towards understanding recovery of hot-carrier induced degradation. 147-151
• 
  D. Beckmeier, Andreas Martin:
  Variation-resilient quantifiable plasma process induced damage monitoring. 152-158
• 
  Vincenzo Della Marca, Jérémy Postel-Pellerin, T. Kempf, Arnaud Régnier, Philippe Chiquet, Marc Bocquet:
  Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction. 159-163
• 
  Xuan Feng, Nagarajan Raghavan, Sen Mei, Shurong Dong, Kin Leong Pey, Hei Wong:
  Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress. 164-168
• 
  Shunqiang Xu, Hongyi Wang, Jianfei Wu, Liming Zheng, Jietao Diao:
  A new multitime programmable non-volatile memory cell using high voltage NMOS. 169-172
• 
  Guicui Fu, Yutai Su, Wendi Guo, Bo Wan, Zhongqing Zhang, Ye Wang:
  Life prediction methodology of system-in-package based on physics of failure. 173-178
• 
  Gang-Jun Kim, Nam-Hyun Lee, Jongkyun Kim, Jung Eun Seok, Yunsung Lee:
  Effect of DC/AC stress on the reliability of cell capacitor in DRAM. 179-182
• 
  Jongkyun Kim, Namhyun Lee, Gang-Jun Kim, Young-Yun Lee, Jung-Eun Seok, Yunsung Lee:
  Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM. 183-185
• 
  Yeohyeok Yun, Ji-Hoon Seo, Donghee Son, Bongkoo Kang:
  Method to estimate profile of threshold voltage degradation in MOSFETs due to electrical stress. 186-190
• 
  Yeohyeok Yun, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang:
  Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability. 191-195
• 
  Roberto B. Almeida, Cleiton M. Marques, Paulo F. Butzen, Fabio G. R. G. da Silva, Ricardo A. L. Reis, Cristina Meinhardt:
  Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies. 196-202

Si Technologies & Nanoelectronics: ESD, EMI, Latch-up

• 
  Chunlei Wu:
  Electrically induced physical damage (EIPD) cases study: From electrical overstress (EOS) to product defects. 203-207
• 
  Steffen Holland, Rolf Brenner:
  Voltage oscillations during surge pulses induced by self-extinguishing non-destructive second breakdown in pn-junction diodes. 208-213
• 
  Roger C. Goerl, Paulo Ricardo Cechelero Villa, Letícia Maria Veiras Bolzani, Eduardo Augusto Bezerra, Fabian Luis Vargas:
  An efficient EDAC approach for handling multiple bit upsets in memory array. 214-218
• 
  Shawki Douzi, Moncef Kadi, Habib Boulzazen, Mohamed Tlig, Jaleleddine Ben Hadj Slama:
  Conducted EMI evolution of power SiC MOSFET in a Buck converter after short-circuit aging tests. 219-224
• 
  Zhen Zhang, Yaoting Xue, Ruiqing Ma, Yongheng Yang:
  An easy-implemented confidence filter for signal processing in the complex electromagnetic environment. 225-229
• 
  Jianfei Wu, Wei Zhu, Binhong Li, Yafei Li, Hongyi Wang, Mengjun Wang:
  Investigations on immunity of interfaces between intelligent media processor and DDR3 SDRAM memory. 230-235
• 
  Roman Baburske, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Riteshkumar Bhojani, J. Kowalsky, Josef Lutz:
  Unified view on energy and electrical failure of the short-circuit operation of IGBTs. 236-241

Progress in Failure Analysis: Defect Detection and Analysis

• 
  Yuji Yamagishi, Y. Cho:
  High resolution observation of defects at SiO₂/4H-SiC interfaces using time-resolved scanning nonlinear dielectric microscopy. 242-245
• 
  Yi Chao Low, Pik Kee Tan, Soon Leng Tan, Yuzhe Zhao, Jeffrey Lam:
  Solving 28 nm I/O circuit reliability issue due to IC design weakness. 246-249
• 
  Oskar Amster, K. A. Rubin, Y. Yang, D. Iyer, A. Messinger:
  Application of Scanning Microwave Microscopy nano-C-V to investigate dopant defect under a poly gate device. 250-254
• 
  Venkat Krishnan Ravikumar, Gabriel Lim, Jiann Min Chin, Kin Leong Pey, Joel K. W. Yang:
  Understanding spatial resolution of laser voltage imaging. 255-261
• 
  Eva Kozic, René Hammer, Jördis Rosc, Bernhard Sartory, Joerg Siegert, Franz Schrank, Roland Brunner:
  Metallization defect detection in 3D integrated components using scanning acoustic microscopy and acoustic simulations. 262-266
• 
  Emanuele Villa, Audrey Garnier, Antoine Reverdy:
  Exploitation of Laser Voltage techniques for identification and complete characterization of a scan chain transition fail issue using the second harmonic approach. 267-272
• 
  Anne Beyreuther, Norbert Herfurth, Elham Amini, Tomonori Nakamura, Ingrid De Wolf, Christian Boit:
  Photon emission as a characterization tool for bipolar parasitics in FinFET technology. 273-276
• 
  Tan Li, Hosung Lee, GeunYong Bak, Sanghyeon Baeg:
  Failure signature analysis of power-opens in DDR3 SDRAMs. 277-281
• 
  Michael Hertl, Nicolas Vivet, Fabien Allanic, Sandra Dureau, Armelle Minguet, Nicolas Porcher, Isaline Richard, Pauline Serre:
  Use of golden samples for the assessment of the quality and reproducibility of scanning acoustic microscopy images of electronics samples. 282-287
• 
  Nabil El Belghiti Alaoui, Alexandre Boyer, Patrick Tounsi, Arnaud Viard:
  New defect detection approach using near electromagnetic field probing of high density PCBAs. 288-293
• 
  Giulia Marcello, E. Meda, Matteo Medda:
  Complex automotive ICs defect localization driven by quiescent power supply current: Three cases study. 294-298
• 
  T. Schaffus, P. Albert, W. Breuer, D. Debie, M. Graml, C. Hollerith, F. Kroninger, W. Mack, H. Pfaff, M. Schaffus, J. Walter:
  Influence of sample preparation on intrinsic stresses inside a model Chip - First results of partial decapsulation. 299-303
• 
  Amir Sajjad Bahman, S. M. Jensen, Francesco Iannuzzo:
  Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses. 304-308
• 
  Pik Kee Tan, Yuzhe Zhao, Francis Rivai, Binghai Liu, Yanlin Pan, Ran He, Hao Tan, Zhihong Mai:
  Cross-sectional nanoprobing sample preparation on sub-micron device with fast laser grooving technique. 309-314
• 
  Marc van Veenhuizen:
  Void detection in solder bumps with deep learning. 315-320
• 
  Shaalini Chithambaram, Pik Kee Tan, Yuzhe Zhao, Binghai Liu, Yinzhe Ma, Alfred Quah, Dayanand Nagalingam, Yanlin Pan, Zhihong Mai:
  Failure analysis on 14 nm FinFET devices with ESD CDM failure. 321-333
• 
  Ivo Vogt, Tomonori Nakamura, Ingrid De Wolf, Christian Boit:
  Detection of failure mechanisms in 24-40 nm FinFETs with (spectral) photon emission techniques using InGaAs camera. 334-338
• 
  Xuerong Ye, Cen Chen, Guofu Zhai:
  Fault localization of a switched mode power supply based on extended integer-coded dictionary method. 339-344
• 
  Hye-Young Kim, Jae-Yeon Kim, Ki-Tae Yoo, Won-Jon Yang, Jai-Won Byeon:
  Failure mechanism of Ag nanowire-coated conductive transparent electrode for wearable devices under folding and torsional fatigue condition. 345-349
• 
  Zhongliang Li, Zhixue Zheng, Rachid Outbib:
  A prognostic methodology for power MOSFETs under thermal stress using echo state network and particle filter. 350-354
• 
  G. Cardoso Medeiros, Letícia Maria Veiras Bolzani, Mottaqiallah Taouil, Fabian Vargas, Said Hamdioui:
  A defect-oriented test approach using on-Chip current sensors for resistive defects in FinFET SRAMs. 355-359
• 
  Katsuyoshi Miura, Atsuki Seko, Koji Nakamae:
  Simulation-based evaluation of probing attacks to arbiter PUFs using a time-resolved emission microscope. 360-364
• 
  P. Dreher, Roman Schmidt, A. Vetter, J. Hepp, Karl Aberer, Christoph J. Brabec:
  Non-destructive imaging of defects in Ag-sinter die attach layers - A comparative study including X-ray, Scanning Acoustic Microscopy and Thermography. 365-370
• 
  Bahar Ahmadi, Bahram Javidi, Sina Shahbazmohamadi:
  Automated detection of counterfeit ICs using machine learning. 371-377

Reliability of Microwave and Compound Semiconductors Devices

• 
  Andrew Barnes, Florence Hélière, P. Villar, Hannes Stuhldreier, C. Beaurain, D. Bouw, M. Grunwald, E. Moess, Tobias Muck, C. Schildbach, T. Ayles, A. Kramer, B. Bildner:
  Qualification of GaN microwave transistors for the European Space Agency Biomass mission. 378-384
• 
  Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay:
  Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. 385-388
• 
  Florian Peter Pribahsnik, Mirko Bernardoni, Michael Nelhiebel, M. Mataln, A. Lindemann:
  Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures. 389-392
• 
  W. A. Sasangka, Yu Gao, Chee Lip Gan, Carl V. Thompson:
  Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors. 393-396
• 
  Mehdi Rzin, Alessandro Chini, Carlo De Santi, Matteo Meneghini, A. Hugger, M. Hollmer, H. Stieglauer, M. Madel, J. Splettstößer, D. Sommer, Jan Grünenpütt, K. Beilenhoff, Hervé Blanck, J.-T. Chen, O. Kordina, Gaudenzio Meneghesso, Enrico Zanoni:
  On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs. 397-401
• 
  Omar Chihani, L. Théolier, Alain Bensoussan, Jean-Yves Delétage, André Durier, Eric Woirgard:
  Effect of HTRB lifetest on AlGaN/GaN HEMTs under different voltages and temperatures stresses. 402-405
• 
  D. Hachem, David Trémouilles, Frederic Morancho, Gaëtan Toulon:
  A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance. 406-410
• 
  Dongshin Kim, Ju-Hwan Choi, Nochang Park, Sung-Il Chan, Yongchae Jeong:
  Analysis of semiconductor fault using DS (damped sinusoidal) HPEM injection. 411-417
• 
  Mourad Oualli, Christian Dua, O. Patard, P. Altuntas, S. Piotrowicz, Piero Gamarra, C. Lacam, J.-C. Jacquet, L. Teisseire, D. Lancereau, Eric Chartier, C. Potier, Sylvain L. Delage:
  Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes. 418-422

Power Devices Reliability: Silicon and Passive

• 
  Keting Hu, Zhigang Liu, Francesco Iannuzzo, Frede Blaabjerg:
  Simple and effective open switch fault diagnosis of single-phase PWM rectifier. 423-427
• 
  J. Brandelero, Jeffrey Ewanchuk, Nicolas Degrenne, Stefan Mollov:
  Lifetime extension through Tj equalisation by use of intelligent gate driver with multi-chip power module. 428-432
• 
  Kazunori Hasegawa, Shinichi Nishizawa, Ichiro Omura:
  ESR and capacitance monitoring of a dc-link capacitor used in a three-phase PWM inverter with a front-end diode rectifier. 433-437
• 
  Paolo Magnone, Giacomo Barletta, A. Magrì:
  Investigation of degradation mechanisms in low-voltage p-channel power MOSFETs under High Temperature Gate Bias stress. 438-442
• 
  Hiroaki Matsumori, Kazuki Urata, Toshihisa Shimizu, Koushi Takano, Hitoshi Ishii:
  Capacitor loss analysis method for power electronics converters. 443-446
• 
  S. Kremp, O. Schilling:
  Humidity robustness for high voltage power modules: Limiting mechanisms and improvement of lifetime. 447-452
• 
  Hao Niu, Shujuan Wang, Xuerong Ye, Huai Wang, Frede Blaabjerg:
  Lifetime prediction of aluminum electrolytic capacitors in LED drivers considering parameter shifts. 453-457
• 
  Akihiko Watanabe, Ichiro Omura:
  A power cycling degradation inspector of power semiconductor devices. 458-461
• 
  Nausicaa Dornic, Ali Ibrahim, Zoubir Khatir, Son-Ha Tran, Jean-Pierre Ousten, Jeffrey Ewanchuk, Stefan Mollov:
  Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling. 462-469
• 
  Charalampos Papadopoulos, Chiara Corvasce, Arnost Kopta, Daniel Schneider, Gontran Pâques, Munaf Rahimo:
  The influence of humidity on the high voltage blocking reliability of power IGBT modules and means of protection. 470-475
• 
  Mauro Ciappa, Ying Pang, Chenchen Sun:
  Experimental characterization of critical high-electric field spots in power semiconductors by planar and scanning collimated alpha sources. 476-481
• 
  Masanori Tsukuda, Seiya Abe, Kazunori Hasegawa, Tamotsu Ninomiya, Ichiro Omura:
  Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena. 482-485
• 
  Mohamed Sathik Mohamed Halick, Prasanth Sundarajan, F. Sasongko, Josep Pou:
  Online condition monitoring of IGBT modules using voltage change rate identification. 486-492
• 
  Vahid Samavatian, Yvan Avenas, Hossein Iman-Eini:
  Mutual and self-aging effects of power semiconductors on the thermal behaviour of DC-DC boost power converter. 493-499
• 
  Bat-Otgon Bat-Ochir, Battuvshin Bayarkhuu, Kazunori Hasegawa, Masanori Tsukuda, Bayasgalan Dugarjav, Ichiro Omura:
  Envelop tracking based embedded current measurement for monitoring of IGBT and power converter system. 500-504
• 
  Ravi N. Tripathi, Masanori Tsukuda, Ichiro Omura:
  A fully digital feedback control of gate driver for current balancing of parallel connected power devices. 505-509
• 
  Th. Stiasny, Olivier Quittard, Daniel Waltisberg, U. Meier:
  Reliability evaluation of IGCT from accelerated testing, quality monitoring and field return analysis. 510-513
• 
  Yu Peng, Y. J. Zhang, Datong Liu, L. S. Liu:
  Degradation estimation using feature increment stepwise linear regression for PWM Inverter of Electro-Mechanical Actuator. 514-518
• 
  Zhongxu Wang, Huai Wang, Yi Zhang, Frede Blaabjerg:
  A multi-port thermal coupling model for multi-chip power modules suitable for circuit simulators. 519-523
• 
  Haoran Wang, Huai Wang:
  An analytical circuit based nonlinear thermal model for capacitor banks. 524-527
• 
  Nga Man Li, Subramani Manoharan, Diganta Das, F. Patrick McCluskey:
  Analysis of indentation measured mechanical properties on Multilayer Ceramic Capacitors (MLCCs). 528-533
• 
  Felix Wuest, S. Trampert, S. Janzen, S. Straube, M. Schneider-Ramelow:
  Comparison of temperature sensitive electrical parameter based methods for junction temperature determination during accelerated aging of power electronics. 534-539
• 
  Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
  Measure of high frequency input impedance to study the instability of power devices in short circuit. 540-544
• 
  P. Davari, O. Kristensen, Francesco Iannuzzo:
  Investigation of acoustic emission as a non-invasive method for detection of power semiconductor aging. 545-549

Power Devices Reliability: Wide Bandgap Devices

• 
  Josef Lutz, Jörg Franke:
  Reliability and reliability investigation of wide-bandgap power devices. 550-556
• 
  Jose Angel Ortiz Gonzalez, Olayiwola Alatise:
  Bias temperature instability and condition monitoring in SiC power MOSFETs. 557-562
• 
  Haoze Luo, Paula Diaz Reigosa, Francesco Iannuzzo, Frede Blaabjerg:
  On-line solder layer degradation measurement for SiC-MOSFET modules under accelerated power cycling condition. 563-567
• 
  Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Zongyang Hu, Wenshen Li, Kazuki Nomoto, Debdeep Jena, Huili Grace Xing, Xiang Gao, Gaudenzio Meneghesso, Enrico Zanoni:
  Degradation of GaN-on-GaN vertical diodes submitted to high current stress. 568-571
• 
  Alaleh Tajalli, Eleonora Canato, A. Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso:
  Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors. 572-576
• 
  Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli:
  Effect of short-circuit stress on the degradation of the SiO₂ dielectric in SiC power MOSFETs. 577-583
• 
  Matteo Borga, Matteo Meneghini, Steve Stoffels, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso:
  Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. 584-588
• 
  Tomoyuki Mannen, Keiji Wada:
  Operating-waveform analysis based reliability evaluation of power MOSFETs used for a leg short-circuit initial charge method. 589-592
• 
  Xi Jiang, Jun Wang, Jiwu Lu, Jianjun Chen, Xin Yang, Zongjian Li, Chunming Tu, Zheng John Shen:
  Failure modes and mechanism analysis of SiC MOSFET under short-circuit conditions. 593-597
• 
  F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Jean-Marc Blaquière, G. Guibaud, A. Bourennane:
  Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation. 598-603
• 
  Besar Asllani, Asad Fayyaz, Alberto Castellazzi, Hervé Morel, Dominique Planson:
  V_TH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs. 604-609
• 
  Dario Pagnano, Giorgia Longobardi, Florin Udrea, Jinming Sun, Mohamed Imam, Reenu Garg, Hyeongnam Kim, Alain Charles:
  On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs. 610-614
• 
  Fausto Stella, Olufisayo Olanrewaju, Zineng Yang, Alberto Castellazzi, Gianmario Pellegrino:
  Experimentally validated methodology for real-time temperature cycle tracking in SiC power modules. 615-619
• 
  Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni:
  Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. 620-626
• 
  Lorenzo Ceccarelli, Haoze Luo, Francesco Iannuzzo:
  Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter. 627-630
• 
  Teng Zhang, Bruno Allard, J. Bi:
  The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. 631-635
• 
  Oriol Avino-Salvado, Hervé Morel, Cyril Buttay, Denis Labrousse, Stéphane Lefebvre:
  Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. 636-640
• 
  Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo, F. Gaillard:
  Study of forward AC stress degradation of GaN-on-Si Schottky diodes. 641-644
• 
  Tien Anh Nguyen, Stéphane Lefebvre, Stephane Azzopardi:
  Effect of short circuit aging on safe operating area of SiC MOSFET. 645-651
• 
  J. Z. Fu, F. Fouquet, M. Kadi, Pascal Dherbécourt:
  Evolution of C-V and I-V characteristics for a commercial 600 V GaN GIT power device under repetitive short-circuit tests. 652-655
• 
  Quentin Molin, Mehdi Kanoun, Christophe Raynaud, Hervé Morel:
  Measurement and analysis of SiC-MOSFET threshold voltage shift. 656-660
• 
  H. Du, Paula Diaz Reigosa, Francesco Iannuzzo, Lorenzo Ceccarelli:
  Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules. 661-665
•