Stop the war!
Остановите войну!
for scientists:
default search action
BibTeX records: G. Ghidini
@article{DBLP:journals/mr/Ghidini12, author = {G. Ghidini}, title = {Charge-related phenomena and reliability of non-volatile memories}, journal = {Microelectron. Reliab.}, volume = {52}, number = {9-10}, pages = {1876--1882}, year = {2012}, url = {https://doi.org/10.1016/j.microrel.2012.06.109}, doi = {10.1016/J.MICROREL.2012.06.109}, timestamp = {Sat, 22 Feb 2020 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/mr/Ghidini12.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/LanzaPNAGS09, author = {Mario Lanza and Marc Porti and Montserrat Nafr{\'{\i}}a and Xavier Aymerich and G. Ghidini and A. Sebastiani}, title = {Trapped charge and stress induced leakage current {(SILC)} in tunnel SiO\({}_{\mbox{2}}\) layers of de-processed {MOS} non-volatile memory devices observed at the nanoscale}, journal = {Microelectron. Reliab.}, volume = {49}, number = {9-11}, pages = {1188--1191}, year = {2009}, url = {https://doi.org/10.1016/j.microrel.2009.06.016}, doi = {10.1016/J.MICROREL.2009.06.016}, timestamp = {Sat, 22 Feb 2020 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/mr/LanzaPNAGS09.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/SebastianiPMG07, author = {A. Sebastiani and R. Piagge and Alberto Modelli and G. Ghidini}, title = {High-K dielectrics for inter-poly application in non volatile memories}, journal = {Microelectron. Reliab.}, volume = {47}, number = {4-5}, pages = {598--601}, year = {2007}, url = {https://doi.org/10.1016/j.microrel.2007.01.045}, doi = {10.1016/J.MICROREL.2007.01.045}, timestamp = {Thu, 05 Nov 2020 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/mr/SebastianiPMG07.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/Martin-MartinezGRNACPG07, author = {Javier Mart{\'{\i}}n{-}Mart{\'{\i}}nez and Simone Gerardin and Rosana Rodr{\'{\i}}guez and Montserrat Nafr{\'{\i}}a and Xavier Aymerich and Andrea Cester and Alessandro Paccagnella and G. Ghidini}, title = {Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs}, journal = {Microelectron. Reliab.}, volume = {47}, number = {9-11}, pages = {1349--1352}, year = {2007}, url = {https://doi.org/10.1016/j.microrel.2007.07.088}, doi = {10.1016/J.MICROREL.2007.07.088}, timestamp = {Sun, 02 Oct 2022 01:00:00 +0200}, biburl = {https://dblp.org/rec/journals/mr/Martin-MartinezGRNACPG07.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/GerardinGCPG06, author = {Simone Gerardin and Alessio Griffoni and Andrea Cester and Alessandro Paccagnella and G. Ghidini}, title = {Degradation of static and dynamic behavior of {CMOS} inverters during constant and pulsed voltage stress}, journal = {Microelectron. Reliab.}, volume = {46}, number = {9-11}, pages = {1669--1672}, year = {2006}, url = {https://doi.org/10.1016/j.microrel.2006.07.052}, doi = {10.1016/J.MICROREL.2006.07.052}, timestamp = {Sun, 02 Oct 2022 01:00:00 +0200}, biburl = {https://dblp.org/rec/journals/mr/GerardinGCPG06.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/GhidiniLBBGGGG05, author = {G. Ghidini and M. Langenbuch and R. Bottini and D. Brazzelli and Andrea Ghetti and N. Galbiati and G. Giusto and A. Garavaglia}, title = {Impact of interface and bulk trapped charges on transistor reliability}, journal = {Microelectron. Reliab.}, volume = {45}, number = {5-6}, pages = {857--860}, year = {2005}, url = {https://doi.org/10.1016/j.microrel.2004.11.031}, doi = {10.1016/J.MICROREL.2004.11.031}, timestamp = {Sun, 02 Oct 2022 01:00:00 +0200}, biburl = {https://dblp.org/rec/journals/mr/GhidiniLBBGGGG05.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/LangenbuchBVG05, author = {M. Langenbuch and R. Bottini and Maria Elena Vitali and G. Ghidini}, title = {In situ steam generation {(ISSG)} versus standard steam technology: impact on oxide reliability}, journal = {Microelectron. Reliab.}, volume = {45}, number = {5-6}, pages = {875--878}, year = {2005}, url = {https://doi.org/10.1016/j.microrel.2004.10.026}, doi = {10.1016/J.MICROREL.2004.10.026}, timestamp = {Tue, 16 Jan 2024 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/mr/LangenbuchBVG05.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/GhidiniCGSSV05, author = {G. Ghidini and C. Capolupo and G. Giusto and A. Sebastiani and B. Stragliati and Maria Elena Vitali}, title = {Tunnel oxide degradation under pulsed stress}, journal = {Microelectron. Reliab.}, volume = {45}, number = {9-11}, pages = {1337--1342}, year = {2005}, url = {https://doi.org/10.1016/j.microrel.2005.07.017}, doi = {10.1016/J.MICROREL.2005.07.017}, timestamp = {Tue, 16 Jan 2024 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/mr/GhidiniCGSSV05.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/GhidiniGGGBPSCI03, author = {G. Ghidini and A. Garavaglia and G. Giusto and Andrea Ghetti and R. Bottini and D. Peschiaroli and M. Scaravaggi and F. Cazzaniga and Daniele Ielmini}, title = {Impact of gate stack process on conduction and reliability of 0.18 mum {PMOSFET}}, journal = {Microelectron. Reliab.}, volume = {43}, number = {8}, pages = {1221--1227}, year = {2003}, url = {https://doi.org/10.1016/S0026-2714(03)00175-6}, doi = {10.1016/S0026-2714(03)00175-6}, timestamp = {Sun, 02 Oct 2022 01:00:00 +0200}, biburl = {https://dblp.org/rec/journals/mr/GhidiniGGGBPSCI03.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/GhettiBBGP03, author = {Andrea Ghetti and D. Brazzelli and A. Benvenuti and G. Ghidini and Alessia Pavan}, title = {Anomalous gate oxide conduction on isolation edges: analysis and process optimization}, journal = {Microelectron. Reliab.}, volume = {43}, number = {8}, pages = {1229--1235}, year = {2003}, url = {https://doi.org/10.1016/S0026-2714(03)00176-8}, doi = {10.1016/S0026-2714(03)00176-8}, timestamp = {Sun, 02 Oct 2022 01:00:00 +0200}, biburl = {https://dblp.org/rec/journals/mr/GhettiBBGP03.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/CiminoCPG03, author = {S. Cimino and Andrea Cester and Alessandro Paccagnella and G. Ghidini}, title = {Ionising radiation effects on {MOSFET} drain current}, journal = {Microelectron. Reliab.}, volume = {43}, number = {8}, pages = {1247--1251}, year = {2003}, url = {https://doi.org/10.1016/S0026-2714(03)00179-3}, doi = {10.1016/S0026-2714(03)00179-3}, timestamp = {Sun, 02 Oct 2022 01:00:00 +0200}, biburl = {https://dblp.org/rec/journals/mr/CiminoCPG03.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/GhidiniB02, author = {G. Ghidini and D. Brazzelli}, title = {Evaluation methodology of thin dielectrics for non-volatile memory application}, journal = {Microelectron. Reliab.}, volume = {42}, number = {9-11}, pages = {1473--1480}, year = {2002}, url = {https://doi.org/10.1016/S0026-2714(02)00173-7}, doi = {10.1016/S0026-2714(02)00173-7}, timestamp = {Sat, 22 Feb 2020 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/mr/GhidiniB02.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
@article{DBLP:journals/mr/GalbiatiGCL01, author = {N. Galbiati and G. Ghidini and C. Cremonesi and Luca Larcher}, title = {Impact of the As dose in 0.35 mum {EEPROM} technology: characterization and modeling}, journal = {Microelectron. Reliab.}, volume = {41}, number = {7}, pages = {999--1002}, year = {2001}, url = {https://doi.org/10.1016/S0026-2714(01)00056-7}, doi = {10.1016/S0026-2714(01)00056-7}, timestamp = {Sat, 22 Feb 2020 00:00:00 +0100}, biburl = {https://dblp.org/rec/journals/mr/GalbiatiGCL01.bib}, bibsource = {dblp computer science bibliography, https://dblp.org} }
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.