BibTeX records: G. Ghidini

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@article{DBLP:journals/mr/Ghidini12,
  author    = {G. Ghidini},
  title     = {Charge-related phenomena and reliability of non-volatile memories},
  journal   = {Microelectronics Reliability},
  volume    = {52},
  number    = {9-10},
  pages     = {1876--1882},
  year      = {2012},
  url       = {https://doi.org/10.1016/j.microrel.2012.06.109},
  doi       = {10.1016/j.microrel.2012.06.109},
  timestamp = {Sun, 28 May 2017 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/bib/journals/mr/Ghidini12},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/LanzaPNAGS09,
  author    = {Mario Lanza and
               Marc Porti and
               Montserrat Nafr{\'{\i}}a and
               Xavier Aymerich and
               G. Ghidini and
               A. Sebastiani},
  title     = {Trapped charge and stress induced leakage current {(SILC)} in tunnel
               SiO\({}_{\mbox{2}}\) layers of de-processed {MOS} non-volatile memory
               devices observed at the nanoscale},
  journal   = {Microelectronics Reliability},
  volume    = {49},
  number    = {9-11},
  pages     = {1188--1191},
  year      = {2009},
  url       = {https://doi.org/10.1016/j.microrel.2009.06.016},
  doi       = {10.1016/j.microrel.2009.06.016},
  timestamp = {Sat, 16 Sep 2017 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/bib/journals/mr/LanzaPNAGS09},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/SebastianiPMG07,
  author    = {A. Sebastiani and
               R. Piagge and
               A. Modelli and
               G. Ghidini},
  title     = {High-K dielectrics for inter-poly application in non volatile memories},
  journal   = {Microelectronics Reliability},
  volume    = {47},
  number    = {4-5},
  pages     = {598--601},
  year      = {2007},
  url       = {https://doi.org/10.1016/j.microrel.2007.01.045},
  doi       = {10.1016/j.microrel.2007.01.045},
  timestamp = {Thu, 08 Jun 2017 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/bib/journals/mr/SebastianiPMG07},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/Martin-MartinezGRNACPG07,
  author    = {Javier Mart{\'{\i}}n{-}Mart{\'{\i}}nez and
               Simone Gerardin and
               Rosana Rodr{\'{\i}}guez and
               Montserrat Nafr{\'{\i}}a and
               Xavier Aymerich and
               Andrea Cester and
               Alessandro Paccagnella and
               G. Ghidini},
  title     = {Lifetime estimation of analog circuits from the electrical characteristics
               of stressed MOSFETs},
  journal   = {Microelectronics Reliability},
  volume    = {47},
  number    = {9-11},
  pages     = {1349--1352},
  year      = {2007},
  url       = {https://doi.org/10.1016/j.microrel.2007.07.088},
  doi       = {10.1016/j.microrel.2007.07.088},
  timestamp = {Sat, 16 Sep 2017 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/bib/journals/mr/Martin-MartinezGRNACPG07},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/BottiniCGGGMSS07,
  author    = {R. Bottini and
               S. Costantini and
               N. Galbiati and
               Andrea Ghetti and
               G. Ghidini and
               A. Mauri and
               C. Scozzari and
               A. Sebastiani},
  title     = {High voltage transistor degradation in {NVM} pump application},
  journal   = {Microelectronics Reliability},
  volume    = {47},
  number    = {9-11},
  pages     = {1384--1388},
  year      = {2007},
  url       = {https://doi.org/10.1016/j.microrel.2007.07.050},
  doi       = {10.1016/j.microrel.2007.07.050},
  timestamp = {Mon, 21 Jan 2019 00:00:00 +0100},
  biburl    = {https://dblp.org/rec/bib/journals/mr/BottiniCGGGMSS07},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/GerardinGCPG06,
  author    = {Simone Gerardin and
               Alessio Griffoni and
               Andrea Cester and
               Alessandro Paccagnella and
               G. Ghidini},
  title     = {Degradation of static and dynamic behavior of {CMOS} inverters during
               constant and pulsed voltage stress},
  journal   = {Microelectronics Reliability},
  volume    = {46},
  number    = {9-11},
  pages     = {1669--1672},
  year      = {2006},
  url       = {https://doi.org/10.1016/j.microrel.2006.07.052},
  doi       = {10.1016/j.microrel.2006.07.052},
  timestamp = {Thu, 08 Jun 2017 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/bib/journals/mr/GerardinGCPG06},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/GhidiniLBBGGGG05,
  author    = {G. Ghidini and
               M. Langenbuch and
               R. Bottini and
               D. Brazzelli and
               Andrea Ghetti and
               N. Galbiati and
               G. Giusto and
               A. Garavaglia},
  title     = {Impact of interface and bulk trapped charges on transistor reliability},
  journal   = {Microelectronics Reliability},
  volume    = {45},
  number    = {5-6},
  pages     = {857--860},
  year      = {2005},
  url       = {https://doi.org/10.1016/j.microrel.2004.11.031},
  doi       = {10.1016/j.microrel.2004.11.031},
  timestamp = {Mon, 21 Jan 2019 00:00:00 +0100},
  biburl    = {https://dblp.org/rec/bib/journals/mr/GhidiniLBBGGGG05},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/LangenbuchBVG05,
  author    = {M. Langenbuch and
               R. Bottini and
               M. E. Vitali and
               G. Ghidini},
  title     = {In situ steam generation {(ISSG)} versus standard steam technology:
               impact on oxide reliability},
  journal   = {Microelectronics Reliability},
  volume    = {45},
  number    = {5-6},
  pages     = {875--878},
  year      = {2005},
  url       = {https://doi.org/10.1016/j.microrel.2004.10.026},
  doi       = {10.1016/j.microrel.2004.10.026},
  timestamp = {Sun, 28 May 2017 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/bib/journals/mr/LangenbuchBVG05},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/GhidiniCGSSV05,
  author    = {G. Ghidini and
               C. Capolupo and
               G. Giusto and
               A. Sebastiani and
               B. Stragliati and
               M. E. Vitali},
  title     = {Tunnel oxide degradation under pulsed stress},
  journal   = {Microelectronics Reliability},
  volume    = {45},
  number    = {9-11},
  pages     = {1337--1342},
  year      = {2005},
  url       = {https://doi.org/10.1016/j.microrel.2005.07.017},
  doi       = {10.1016/j.microrel.2005.07.017},
  timestamp = {Sun, 28 May 2017 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/bib/journals/mr/GhidiniCGSSV05},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/GhidiniGGGBPSCI03,
  author    = {G. Ghidini and
               A. Garavaglia and
               G. Giusto and
               Andrea Ghetti and
               R. Bottini and
               D. Peschiaroli and
               M. Scaravaggi and
               F. Cazzaniga and
               Daniele Ielmini},
  title     = {Impact of gate stack process on conduction and reliability of 0.18
               mum {PMOSFET}},
  journal   = {Microelectronics Reliability},
  volume    = {43},
  number    = {8},
  pages     = {1221--1227},
  year      = {2003},
  url       = {https://doi.org/10.1016/S0026-2714(03)00175-6},
  doi       = {10.1016/S0026-2714(03)00175-6},
  timestamp = {Thu, 08 Jun 2017 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/bib/journals/mr/GhidiniGGGBPSCI03},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/GhettiBBGP03,
  author    = {Andrea Ghetti and
               D. Brazzelli and
               A. Benvenuti and
               G. Ghidini and
               Alessia Pavan},
  title     = {Anomalous gate oxide conduction on isolation edges: analysis and process
               optimization},
  journal   = {Microelectronics Reliability},
  volume    = {43},
  number    = {8},
  pages     = {1229--1235},
  year      = {2003},
  url       = {https://doi.org/10.1016/S0026-2714(03)00176-8},
  doi       = {10.1016/S0026-2714(03)00176-8},
  timestamp = {Tue, 12 Mar 2019 00:00:00 +0100},
  biburl    = {https://dblp.org/rec/bib/journals/mr/GhettiBBGP03},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/CiminoCPG03,
  author    = {S. Cimino and
               Andrea Cester and
               Alessandro Paccagnella and
               G. Ghidini},
  title     = {Ionising radiation effects on {MOSFET} drain current},
  journal   = {Microelectronics Reliability},
  volume    = {43},
  number    = {8},
  pages     = {1247--1251},
  year      = {2003},
  url       = {https://doi.org/10.1016/S0026-2714(03)00179-3},
  doi       = {10.1016/S0026-2714(03)00179-3},
  timestamp = {Thu, 08 Jun 2017 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/bib/journals/mr/CiminoCPG03},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/GhidiniB02,
  author    = {G. Ghidini and
               D. Brazzelli},
  title     = {Evaluation methodology of thin dielectrics for non-volatile memory
               application},
  journal   = {Microelectronics Reliability},
  volume    = {42},
  number    = {9-11},
  pages     = {1473--1480},
  year      = {2002},
  url       = {https://doi.org/10.1016/S0026-2714(02)00173-7},
  doi       = {10.1016/S0026-2714(02)00173-7},
  timestamp = {Sun, 28 May 2017 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/bib/journals/mr/GhidiniB02},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/ViganoGGS02,
  author    = {E. Vigan{\`{o}} and
               A. Ghetti and
               G. Ghidini and
               Alessandro S. Spinelli},
  title     = {Post-breakdown characterization in thin gate oxides},
  journal   = {Microelectronics Reliability},
  volume    = {42},
  number    = {9-11},
  pages     = {1491--1496},
  year      = {2002},
  url       = {https://doi.org/10.1016/S0026-2714(02)00176-2},
  doi       = {10.1016/S0026-2714(02)00176-2},
  timestamp = {Sun, 28 May 2017 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/bib/journals/mr/ViganoGGS02},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/GalbiatiGCL01,
  author    = {N. Galbiati and
               G. Ghidini and
               C. Cremonesi and
               Luca Larcher},
  title     = {Impact of the As dose in 0.35 mum {EEPROM} technology: characterization
               and modeling},
  journal   = {Microelectronics Reliability},
  volume    = {41},
  number    = {7},
  pages     = {999--1002},
  year      = {2001},
  url       = {https://doi.org/10.1016/S0026-2714(01)00056-7},
  doi       = {10.1016/S0026-2714(01)00056-7},
  timestamp = {Thu, 08 Jun 2017 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/bib/journals/mr/GalbiatiGCL01},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/BrazzelliGR01,
  author    = {D. Brazzelli and
               G. Ghidini and
               C. Riva},
  title     = {Optimization of WSi\({}_{\mbox{2}}\) by SiH\({}_{\mbox{4}}\) {CVD:}
               impact on oxide quality},
  journal   = {Microelectronics Reliability},
  volume    = {41},
  number    = {7},
  pages     = {1003--1006},
  year      = {2001},
  url       = {https://doi.org/10.1016/S0026-2714(01)00057-9},
  doi       = {10.1016/S0026-2714(01)00057-9},
  timestamp = {Sun, 28 May 2017 01:00:00 +0200},
  biburl    = {https://dblp.org/rec/bib/journals/mr/BrazzelliGR01},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
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