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Sanjay K. Banerjee
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2020 – today
- 2022
- [c4]S. S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni, Sanjay K. Banerjee:
Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices. DRC 2022: 1-2 - 2021
- [j4]Urmimala Roy, Tanmoy Pramanik, Subhendu Roy, Avhishek Chatterjee, Leonard F. Register, Sanjay K. Banerjee:
Machine Learning for Statistical Modeling: The Case of Perpendicular Spin-Transfer-Torque Random Access Memory. ACM Trans. Design Autom. Electr. Syst. 26(3): 24:1-24:17 (2021)
2010 – 2019
- 2019
- [c3]Jacob N. Rohan, Pingping Zhuang, S. S. Teja Nibhanupudi, Sanjay K. Banerjee, Jaydeep P. Kulkarni:
Neural Network Assisted Compact Model for Accurate Characterization of Cycle-to-cycle Variations in 2-D $h$-BN based RRAM devices. DRC 2019: 103-104 - [c2]Omar B. Mohammed, Leonard F. Register, Sanjay K. Banerjee:
Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect Transistors. DRC 2019: 129-130 - 2018
- [c1]Amritesh Rai, Jun Hong Park, Chenxi Zhang, Iljo Kwak, Steven Wolf, Suresh Vishwanath, Xinyu Lin, Jacek Furdyna, Huili Grace Xing, Kyeongjae Cho, Andrew C. Kummel, Sanjay K. Banerjee:
Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering. DRC 2018: 1-2 - 2010
- [j3]Sanjay K. Banerjee, Leonard Franklin Register, Emanuel Tutuc, Dipanjan Basu, Seyoung Kim, Dharmendar Reddy, Allan H. MacDonald:
Graphene for CMOS and Beyond CMOS Applications. Proc. IEEE 98(12): 2032-2046 (2010)
2000 – 2009
- 2005
- [j2]David Q. Kelly, Sagnik Dey, David Onsongo, Sanjay K. Banerjee:
Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs. Microelectron. Reliab. 45(7-8): 1033-1040 (2005)
1990 – 1999
- 1990
- [j1]Gregory Munson Yeric, A. F. Tasch Jr., Sanjay K. Banerjee:
A universal MOSFET mobility degradation model for circuit simulation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 9(10): 1123-1126 (1990)
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