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Fábio G. R. G. da Silva

Fabio G. Rossato G. da Silva

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2020 – today

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2022
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Fábio G. R. G. da Silva, Rafael N. M. Oliveira, Alexandra L. Zimpeck, Cristina Meinhardt, Ricardo Reis:
Exploring XOR-based Full Adders and decoupling cells to variability mitigation at FinFET technology. Integr. 87: 137-146 (2022)
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Rafael N. M. Oliveira, Fábio G. R. G. da Silva, Ricardo Reis, Rafael B. Schvittz, Cristina Meinhardt:
Improving Soft Error Robustness of Full Adder Circuits with Decoupling Cell and Transistor Sizing. SBCCI 2022: 1-6
2021
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Rafael N. M. Oliveira, Fábio G. R. G. da Silva, Ricardo Reis, Cristina Meinhardt:
SET Mitigation Techniques on Mirror Full Adder at 7 nm FinFET Technology. LATS 2021: 1-2
2020
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Rafael N. M. Oliveira, Fábio G. R. G. da Silva, Ricardo Reis, Cristina Meinhardt:
Mirror Full Adder SET Susceptibility on 7nm FinFET Technology. ICECS 2020: 1-4
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Fabio G. Rossato G. da Silva, Cristina Meinhardt, Ricardo Reis:
Mitigation Effects of Decoupling Cells on Full Adders Process Variability. MWSCAS 2020: 317-320

2010 – 2019

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2019
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Fabio G. Rossato G. da Silva, Cristina Meinhardt, Ricardo Augusto da Luz Reis:
FinFET Variability and Near-threshold operation: Impact on Full Adders design using XOR Blocks. ICECS 2019: 638-641
2018
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Roberto B. Almeida, Cleiton Magano Marques, Paulo F. Butzen, Fábio G. R. G. da Silva, Ricardo A. L. Reis, Cristina Meinhardt:
Analysis of 6 T SRAM cell in sub-45 nm CMOS and FinFET technologies. Microelectron. Reliab. 88-90: 196-202 (2018)
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Fabio G. Rossato G. da Silva, Cristina Meinhardt, Ricardo Reis:
Impact of Near-Threshold and Variability on 7nm FinFET XOR Circuits. ICECS 2018: 573-576
2016
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Fábio G. R. G. da Silva, Paulo F. Butzen, Cristina Meinhardt:
PVT variability analysis of FinFET and CMOS XOR circuits at 16nm. ICECS 2016: 528-531

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