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H. Jörg Osten

Hans Jörg Osten – Jörg Osten

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affiliation: University of Hanover, Germany

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Journal Articles

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2009
[j5]
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  - journals/mj/LahaBDSBASFO09
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  - https://dblp.org/rec/journals/mj/LahaBDSBASFO09
Apurba Laha, E. Bugiel, Rytis Dargis, Dominik Schwendt, M. Badylevich, V. V. Afanasev, A. Stesmans, Andreas Fissel, H. Jörg Osten:
Integration of low dimensional crystalline Si into functional epitaxial oxides. Microelectron. J. 40(3): 633-637 (2009)
2008
[j4]
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Andreas Fissel, Apurba Laha, E. Bugiel, D. Kühne, M. Czernohorsky, Rytis Dargis, H. Jörg Osten:
Silicon in functional epitaxial oxides: A new group of nanostructures. Microelectron. J. 39(3-4): 512-517 (2008)
2005
[j3]
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Andreas Fissel, C. Wang, E. Bugiel, H. Jörg Osten:
Epitaxial growth of non-cubic silicon. Microelectron. J. 36(3-6): 506-509 (2005)
2001
[j2]
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H. Jörg Osten, J. P. Liu, H.-J. Müssig, P. Zaumseil:
Epitaxial, high-K dielectrics on silicon: the example of praseodymium oxide. Microelectron. Reliab. 41(7): 991-994 (2001)
2000
[j1]
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  - journals/jssc/GrauLWKOP00
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Günter Grau, Ulrich Langmann, Wolfgang Winkler, Dieter Knoll, Jörg Osten, Klaus Pressel:
A current-folded up-conversion mixer and VCO with center-tapped inductor in a SiGe-HBT technology for 5-GHz wireless LAN applications. IEEE J. Solid State Circuits 35(9): 1345-1352 (2000)

Conference and Workshop Papers

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2009
[c2]
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  - conf/nems/WangLFSDWSBLO09
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Jinxing Wang, Apurba Laha, Andreas Fissel, Dominik Schwendt, Rytis Dargis, Tatsuro Watahiki, Roman Shayduk, Wolfgang Braun, Tianmo Liu, H. Jörg Osten:
Structural and strain relaxation study of epitaxially grown nano-thick Nd₂O₃/Si(111) heterostructure. NEMS 2009: 436-440
1999
[c1]
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  - conf/cicc/WinklerBEEHKOPPS99
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Wolfgang Winkler, Johannes Borngräber, Heide Erzgraeber, Ha. Erzgraber, Bernd Heinemann, Dieter Knoll, H. Jörg Osten, Michael Pierschel, Klaus Pressel, Peter Schley:
Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules. CICC 1999: 351-358

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