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Masaaki Nishijima

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2010 – 2019

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2012
[j2]
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  - journals/ieicet/NegoroKMNASUT12
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Noboru Negoro, Masayuki Kuroda, Tomohiro Murata, Masaaki Nishijima, Yoshiharu Anda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka:
K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W. IEICE Trans. Electron. 95-C(8): 1327-1331 (2012)

1990 – 1999

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1994
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Masahiro Maeda, Masaaki Nishijima, Hiroyasu Takehara, Chinatsu Adachi, Hiromasa Fujimoto, Osamu Ishikawa:
A 3.5 V, 1.3 W GaAs power multi-chip IC for cellular phones. IEEE J. Solid State Circuits 29(10): 1250-1256 (1994)

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