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2010 – 2019
- 2015
[j8]Meng-Fan Chang, Yu-Fan Lin, Yen-Chen Liu, Jui-Jen Wu, Shin-Jang Shen, Wu-Chin Tsai, Yu-Der Chih:
An Asymmetric-Voltage-Biased Current-Mode Sensing Scheme for Fast-Read Embedded Flash Macros. IEEE J. Solid State Circuits 50(9): 2188-2198 (2015)- [j7]Meng-Fan Chang, Jui-Jen Wu, Tun-Fei Chien, Yen-Chen Liu, Ting-Chin Yang, Wen-Chao Shen, Ya-Chin King, Chrong Jung Lin, Ku-Feng Lin, Yu-Der Chih, Tsung-Yung Jonathan Chang:
Low VDDmin Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations. IEEE J. Solid State Circuits 50(11): 2786-2795 (2015) - 2014
- [j6]Meng-Fan Chang, Chia-Chen Kuo, Shyh-Shyuan Sheu, Chorng-Jung Lin, Ya-Chin King, Frederick T. Chen, Tzu-Kun Ku, Ming-Jinn Tsai, Jui-Jen Wu, Yu-Der Chih:
Area-Efficient Embedded Resistive RAM (ReRAM) Macros Using Logic-Process Vertical-Parasitic-BJT (VPBJT) Switches and Read-Disturb-Free Temperature-Aware Current-Mode Read Scheme. IEEE J. Solid State Circuits 49(4): 908-916 (2014) - [c2]Meng-Fan Chang, Jui-Jen Wu, Tun-Fei Chien, Yen-Chen Liu, Ting-Chin Yang, Wen-Chao Shen, Ya-Chin King, Chorng-Jung Lin, Ku-Feng Lin, Yu-Der Chih, Sreedhar Natarajan, Jonathan Chang:
19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme. ISSCC 2014: 332-333 - 2013
- [j5]Meng-Fan Chang, Ming-Bin Chen, Lai-Fu Chen, Shu-Meng Yang, Yao-Jen Kuo, Jui-Jen Wu, Hsiu-Yun Su, Yuan-Hua Chu, Wen-Chin Wu, Tzu-Yi Yang, Hiroyuki Yamauchi:
A Sub-0.3 V Area-Efficient L-Shaped 7T SRAM With Read Bitline Swing Expansion Schemes Based on Boosted Read-Bitline, Asymmetric-VTH Read-Port, and Offset Cell VDD Biasing Techniques. IEEE J. Solid State Circuits 48(10): 2558-2569 (2013) - 2012
- [j4]Jui-Jen Wu, Meng-Fan Chang, Shau-Wei Lu, Robert Lo, Quincy Li:
A 45-nm Dual-Port SRAM Utilizing Write-Assist Cells Against Simultaneous Access Disturbances. IEEE Trans. Circuits Syst. II Express Briefs 59-II(11): 790-794 (2012) - [c1]Ming-Pin Chen, Lai-Fu Chen, Meng-Fan Chang, Shu-Meng Yang, Yao-Jen Kuo, Jui-Jen Wu, Mon-Shu Ho, Hsiu-Yun Su, Yuan-Hua Chu, Wen-Chin Wu, Tzu-Yi Yang, Hiroyuki Yamauchi:
A 260mV L-shaped 7T SRAM with bit-line (BL) Swing expansion schemes based on boosted BL, asymmetric-VTH read-port, and offset cell VDD biasing techniques. VLSIC 2012: 112-113 - 2011
- [j3]Jui-Jen Wu, Yen-Hui Chen, Meng-Fan Chang, Po-Wei Chou, Chien-Yuan Chen, Hung-Jen Liao, Ming-Bin Chen, Yuan-Hua Chu, Wen-Chin Wu, Hiroyuki Yamauchi:
A Large Sigma V TH /VDD Tolerant Zigzag 8T SRAM With Area-Efficient Decoupled Differential Sensing and Fast Write-Back Scheme. IEEE J. Solid State Circuits 46(4): 815-827 (2011) - 2010
- [j2]Meng-Fan Chang, Jui-Jen Wu, Kuang-Ting Chen, Yung-Chi Chen, Yen-Hui Chen, Robin Lee, Hung-Jen Liao, Hiroyuki Yamauchi:
A Differential Data-Aware Power-Supplied (D 2 AP) 8T SRAM Cell With Expanded Write/Read Stabilities for Lower VDDmin Applications. IEEE J. Solid State Circuits 45(6): 1234-1245 (2010)
2000 – 2009
- 2009
- [j1]Yen-Huei Chen, Gary Chan, Shao-Yu Chou, Hsien-Yu Pan, Jui-Jen Wu, Robin Lee, Hung-Jen Liao, Hiroyuki Yamauchi:
A 0.6 V Dual-Rail Compiler SRAM Design on 45 nm CMOS Technology With Adaptive SRAM Power for Lower VDD_min VLSIs. IEEE J. Solid State Circuits 44(4): 1209-1215 (2009)
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