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ORCIDRishi Sharma 0002
Person information
- affiliation: CSIR, Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan, India
Other persons with the same name
- Rishi Sharma — disambiguation page
- Rishi Sharma 0001
![[0000-0002-1928-1549]](https://dblp.org/img/orcid-mark.12x12.png "0000-0002-1928-1549")
— EPFL, Lausanne, Switzerland - Rishi Sharma 0003 — National Institute of Technology Karnataka, Surathkal, Mangalore, India
- Rishi Sharma 0004 — IIIT Delhi, India
- Rishi Sharma 0005 — Stanford University, Stanford, CA, USA
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2020 – today
- 2022
[d1]Soumendu Sinha, Nishad Sahu, Rishabh Bhardwaj, Het Shah, Ravindra Mukhiya, Rishi Sharma:
Supplementary Files - Towards Development of an ISFET-based Smart pH Sensor: Enabling Machine Learning for Drift Compensation in IoT Applications. IEEE DataPort, 2022
- 2020
- [j2]Soumendu Sinha, Rishabh Bhardwaj, Nishad Sahu, Hitesh Ahuja, Rishi Sharma, Ravindra Mukhiya:
Temperature and temporal drift compensation for Al2O3-gate ISFET-based pH sensor using machine learning techniques. Microelectron. J. 97: 104710 (2020)
2010 – 2019
- 2016
- [j1]Rekha Chaudhary, Amit Sharma, Soumendu Sinha, Jyoti Yadav, Rishi Sharma, Ravindra Mukhiya, Vinod K. Khanna:
Fabrication and characterisation of Al gate n-metal-oxide-semiconductor field-effect transistor, on-chip fabricated with silicon nitride ion-sensitive field-effect transistor. IET Comput. Digit. Tech. 10(5): 268-272 (2016) - 2015
- [c2]Rekha Chaudhary, Amit Sharma, Soumendu Sinha, Jitendra Yadav, Rishi Sharma, Ravindra Mukhiya, Vinod K. Khanna:
Fabrication and characterization of Al gate n-MOSFET, on-chip fabricated with Si3N4 ISFET. VDAT 2015: 1-4 - [c1]Jitendra Yadav, Soumendu Sinha, Amit Sharma, Rekha Chaudhary, Ravindra Mukhiya, Rishi Sharma, Vinod K. Khanna:
Simulation and characterization of dual-gate SOI MOSFET, on-chip fabricated with ISFET. VDAT 2015: 1-5
Coauthor Index
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