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G. R. Mulfinger

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2017
[c1]
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D. H. Triyoso, G. R. Mulfinger, K. Hempel, H. Tao, F. Koehler, L. Kang, A. Kumar, T. McArdle, J. Holt, A. L. Child, S. Straub, F. Ludwig, Z. Chen, J. Kluth, Rick Carter:
Characterization of atomic layer deposited low-k spacer for FDSOI high-k metal gate transistor. ICICDT 2017: 1-4

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