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ORCIDSébastien Fregonese
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2020 – today
- 2024
[c17]Pascal Chevalier, Florian Cacho, C. Durand, N. Derrier, V. Millon, Frederic Monsieur, A. Gauthier, P. Billy, Sébastien Fregonese, Thomas Zimmer, H. Audouin, Michel Buczko, Didier Céli, C. Deglise-Favre, Cheikh Diouf, O. Foissey, M. Hello, N. Guitard, S. Madassamy, S. Ramirez-Ruiz, C. Renard, F. Sonnerat, V. Yon, D. Gloria, G. Waltisperger:
A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications. BCICTS 2024: 13-17- [c16]Markus Müller, Sébastien Fregonese, Christoph Weimer, Guangsheng Liang, Xiaodi Jin, Maximilian Froitzheim, Thomas Zimmer, Michael Schröter:
On the Safe Operating Area of InP HBTs. BCICTS 2024: 290-293 - 2023
- [c15]Thomas Zimmer, Sébastien Fregonese, Anjan Chakravorty:
Electro-Thermal Investigation of SiGe HBTs: A Review. BCICTS 2023: 44-49 - 2021
- [c14]Sébastien Fregonese, Chhandak Mukherjee, Holger Rücker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng
, Marine Couret, François Marc, Cristell Maneux, Thomas Zimmer:
Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance. BCICTS 2021: 1-7
2010 – 2019
- 2019
- [c13]Soumya Ranjan Panda, Sébastien Fregonese, Anjan Chakravorty, Thomas Zimmer:
TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range. BCICTS 2019: 1-4 - [c12]Bishwadeep Saha, Sébastien Frégonese, Soumya Ranjan Panda, Anjan Chakravorty, Didier Céli, Thomas Zimmer:
Collector-substrate modeling of SiGe HBTs up to THz range. BCICTS 2019: 1-4 - 2018
- [c11]D. Fadi, Wei Wei, Emiliano Pallecchi, M. Anderson, J. Stake, Marina Deng, Sébastien Fregonese, Thomas Zimmer, Henri Happy:
2D RF Electronics: from devices to circuits - challenges and applications. DRC 2018: 1-2 - 2017
- [j4]Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer:
Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE 105(6): 1035-1050 (2017) - [c10]Tony Hanna, Nathalie Deltimple, Sébastien Fregonese:
A wideband highly efficient class-J integrated power amplifier for 5G applications. NEWCAS 2017: 325-328 - [c9]Tony Hanna, Nathalie Deltimple, Sébastien Fregonese:
A class-J power amplifier for 5G applications in 28nm CMOS FD-SOI technology. SBCCI 2017: 110-113 - 2016
- [c8]Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer, Wei Wei, Henri Happy:
Physics-based electrical compact model for monolayer Graphene FETs. ESSDERC 2016: 240-243 - 2015
- [c7]C. Mukherjee, Jorgue Daniel Aguirre Morales, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, Wei Wei:
Characterization and modeling of low-frequency noise in CVD-grown graphene FETs. ESSDERC 2015: 176-179 - [c6]Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer:
A new physics-based compact model for Bilayer Graphene Field-Effect Transistors. ESSDERC 2015: 180-183 - [c5]Sébastien Fregonese, Jorgue Daniel Aguirre Morales, Magali De Matos, Cristell Maneux, Thomas Zimmer:
Graphene FET evaluation for RF and mmWave circuit applications. ISCAS 2015: 2920-2923 - [c4]Sébastien Fregonese, Rosario D'Esposito, Magali De Matos, Andreas Kohler, Cristell Maneux, Thomas Zimmer:
Substrate-coupling effect in BiCMOS technology for millimeter wave applications. NEWCAS 2015: 1-4 - 2014
- [c3]C. Mukherjee, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, David Mele:
Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation. ESSDERC 2014: 305-308 - 2012
- [c2]Mario Weis, Sébastien Fregonese, Marco Santorelli, Amit Kumar Sahoo, Cristell Maneux, Thomas Zimmer:
Pulsed I(V) - pulsed RF measurement system for microwave device characterization with 80ns/45GHz. ESSDERC 2012: 189-192 - 2011
- [j3]Si-Yu Liao, Jean-Marie Retrouvey, Guillaume Agnus, Weisheng Zhao, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer, Djaafar Chabi, Arianna Filoramo, Vincent Derycke, Christian Gamrat, Jacques-Olivier Klein:
Design and Modeling of a Neuro-Inspired Learning Circuit Using Nanotube-Based Memory Devices. IEEE Trans. Circuits Syst. I Regul. Pap. 58-I(9): 2172-2181 (2011) - 2010
- [c1]Sébastien Fregonese, Cristell Maneux, Thomas Zimmer:
From nanoscale technology scenarios to compact device models for ambipolar devices. ICECS 2010: 57-61
2000 – 2009
- 2007
- [j2]Ian O'Connor, Junchen Liu, Frédéric Gaffiot, Fabien Prégaldiny, Christophe Lallement, Cristell Maneux, Johnny Goguet, Sébastien Fregonese, Thomas Zimmer, Lorena Anghel, Trong-Trinh Dang, Régis Leveugle:
CNTFET Modeling and Reconfigurable Logic-Circuit Design. IEEE Trans. Circuits Syst. I Regul. Pap. 54-I(11): 2365-2379 (2007) - 2004
- [j1]Hassène Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese:
Representation of the SiGe HBT's thermal impedance by linear and recursive networks. Microelectron. Reliab. 44(6): 945-950 (2004)
Coauthor Index
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