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Towhidur Razzak

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2010 – 2019

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2019
[c2]
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Hao Xue, Choong Hee Lee, Kamal Hussian, Towhidur Razzak, Mamun Abdullah, Zhanbo Xia, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu:
RF Performance of 130 nm Al0.75Ga0.25N/Al0.6Ga0.4N HFETs with MBE-Regrown Contacts. DRC 2019: 157-158
2018
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Hao Xue, Towhidur Razzak, Seongmo Hwang, Antwon Coleman, Sanyam Bajaj, Yuewei Zhang, Zane Jamal-Eddin, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu:
All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETs. DRC 2018: 1-2

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