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Haruki Yokoyama
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2020 – today
- 2023
- [c11]Satoshi Munakata, Caterina Urban, Haruki Yokoyama, Koji Yamamoto, Kazuki Munakata:
Verifying Attention Robustness of Deep Neural Networks Against Semantic Perturbations. NFM 2023: 37-61 - 2022
- [c10]Satoshi Munakata, Caterina Urban, Haruki Yokoyama, Koji Yamamoto, Kazuki Munakata:
Verifying Attention Robustness of Deep Neural Networks against Semantic Perturbations. APSEC 2022: 560-561 - [i3]Satoshi Munakata, Caterina Urban, Haruki Yokoyama, Koji Yamamoto, Kazuki Munakata:
Verifying Attention Robustness of Deep Neural Networks against Semantic Perturbations. CoRR abs/2207.05902 (2022) - [i2]Zhijie Wang, Yuheng Huang, Lei Ma, Haruki Yokoyama, Susumu Tokumoto, Kazuki Munakata:
An Exploratory Study of AI System Risk Assessment from the Lens of Data Distribution and Uncertainty. CoRR abs/2212.06828 (2022) - 2021
- [c9]Kunihiro Noda, Haruki Yokoyama, Shinji Kikuchi:
Sirius: Static Program Repair with Dependence Graph-Based Systematic Edit Patterns. ICSME 2021: 437-447 - [i1]Kunihiro Noda, Haruki Yokoyama, Shinji Kikuchi:
Sirius: Static Program Repair with Dependence Graph-Based Systematic Edit Patterns. CoRR abs/2107.04234 (2021) - 2020
- [c8]Haruki Yokoyama, Satoshi Onoue, Shinji Kikuchi:
Towards Building Robust DNN Applications: An Industrial Case Study of Evolutionary Data Augmentation. ASE 2020: 1184-1188
2010 – 2019
- 2019
- [c7]Haruki Yokoyama:
Machine Learning System Architectural Pattern for Improving Operational Stability. ICSA Companion 2019: 267-274 - 2017
- [c6]Akito Tanikado, Haruki Yokoyama, Masahiro Yamamoto, Soichi Sumi, Yoshiki Higo, Shinji Kusumoto:
New Strategies for Selecting Reuse Candidates on Automated Program Repair. COMPSAC (2) 2017: 266-267 - [c5]Haruki Yokoyama, Yoshiki Higo, Shinji Kusumoto:
Evaluating Automated Program Repair Using Characteristics of Defects. IWESEP 2017: 47-52 - 2016
- [c4]Hiroki Nakajima, Yoshiki Higo, Haruki Yokoyama, Shinji Kusumoto:
Toward Developer-like Automated Program Repair - Modification Comparisons between GenProg and Developers. APSEC 2016: 241-248 - [c3]Haruki Yokoyama, Yoshiki Higo, Keisuke Hotta, Takafumi Ohta, Kozo Okano, Shinji Kusumoto:
Toward improving ability to repair bugs automatically: a patch candidate location mechanism using code similarity. SAC 2016: 1364-1370 - 2014
- [c2]Yu Kurata, Yasuaki Hashizume, Shinichi Aozasa, Mikitaka Itoh, Toshikazu Hashimoto, Hiromasa Tanobe, Yasuhiko Nakanishi, Eiji Yoshida, Hiroyuki Fukuyama, Hiroshi Yamazaki, Takashi Goh, Haruki Yokoyama, Yoshifumi Muramoto:
400-G coherent receiver using silica-based heterogeneously-integrated PLC with newly developed waveplate type PBS. ECOC 2014: 1-3 - [c1]Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Toshihide Yoshimatsu, Hideaki Matsuzaki:
High-speed avalanche photodiodes for 100-Gb/s systems and beyond. ECOC 2014: 1-3 - 2012
- [j6]Atsushi Teranishi, Kaoru Shizuno, Safumi Suzuki, Masahiro Asada, Hiroki Sugiyama, Haruki Yokoyama:
Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay. IEICE Electron. Express 9(5): 385-390 (2012) - [j5]Atsushi Teranishi, Safumi Suzuki, Kaoru Shizuno, Masahiro Asada, Hiroki Sugiyama, Haruki Yokoyama:
Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers. IEICE Trans. Electron. 95-C(3): 401-407 (2012)
2000 – 2009
- 2005
- [j4]Naoteru Shigekawa, Kazumi Nishimura, Haruki Yokoyama, Kenji Shiojima, Kohji Hohkawa:
Velocity dispersion in GaN-based surface acoustic wave filters on (0001) sapphire substrates. IEICE Electron. Express 2(19): 495-500 (2005) - [j3]Kazumi Nishimura, Naoteru Shigekawa, Haruki Yokoyama, Masanobu Hiroki, Kohji Hohkawa:
SAW characteristics of GaN layers with surfaces exposed by dry etching. IEICE Electron. Express 2(19): 501-505 (2005) - 2004
- [j2]Hideaki Matsuzaki, Hiroki Sugiyama, Haruki Yokoyama, Takashi Kobayashi, Takatomo Enoki:
Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors. IEICE Electron. Express 1(11): 292-297 (2004) - 2002
- [j1]Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama:
Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs. Microelectron. Reliab. 42(1): 47-52 (2002)
Coauthor Index
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