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ORCIDChulbum Kim
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2020 – today
- 2024
[c5]Koichi Kawai, Yuichi Einaga, Yoko Oikawa, Yankang He, Biagio Iorio, Shigekazu Yamada, Yoshihiko Kamata, Tomoko Iwasaki, Andrea D'Alessandro, Erwin Yu, Arvind Muralidharan, Qinge Li, Henry Nguyen, Kim-Fung Chan, Michele Piccardi, Takaaki Ichikawa, Jeff Yu, Guan Wang, Kwangwon Kim, Chulbum Kim, Paolo Mangalindan, Hojung Yun, Luca Nubile, Kapil Verma, Sushanth Bhushan, Dheeraj Srinivasan, Hidehiko Kuge, Rajesh Subramanian, Jiro Kishimoto, Toru Kamijo, Padma Musunuri, Chang Siau, Ramin Ghodsi:
13.7 A 1Tb Density 3b/Cell 3D-NAND Flash on a 2YY-Tier Technology with a 300MB/s Write Throughput. ISSCC 2024: 244-246
2010 – 2019
- 2018
- [j3]Chulbum Kim
, Doo-Hyun Kim, Woopyo Jeong, Hyun-Jin Kim, Il-Han Park, Hyun Wook Park, Jong-Hoon Lee, Jiyoon Park, Yang-Lo Ahn, Ji Young Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sanggi Hong, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung:
A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory. IEEE J. Solid State Circuits 53(1): 124-133 (2018) - [c4]Seungjae Lee, Chulbum Kim, Minsu Kim, Sung-Min Joe, Joonsuc Jang, Seungbum Kim, Kangbin Lee, Jisu Kim, Jiyoon Park, Hanjun Lee, Min-Seok Kim, Seonyong Lee, SeonGeon Lee, Jinbae Bang, Dongjin Shin, Hwajun Jang, Deokwoo Lee, Nahyun Kim, Jonghoo Jo, Jonghoon Park, Sohyun Park, Youngsik Rho, Yongha Park, Hojoon Kim, Cheon An Lee, Chungho Yu, Young-Sun Min, Moosung Kim, Kyungmin Kim, Seunghyun Moon, Hyun-Jin Kim, Youngdon Choi, YoungHwan Ryu, Jinwon Choi, Minyeong Lee, Jungkwan Kim, Gyo Soo Choo, Jeong-Don Lim, Dae-Seok Byeon, Ki-Whan Song, Ki-Tae Park, Kyehyun Kyung:
A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput. ISSCC 2018: 340-342 - 2017
- [j2]Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Cheon An Lee, Young-Sun Min, Moosung Kim, Ansoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yup Lee, Ki-Tae Park, Kyehyun Kyung:
256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers. IEEE J. Solid State Circuits 52(1): 210-217 (2017) - [c3]Chulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il-Han Park, Hyun Wook Park, Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-Lo Ahn, Jiyoung Lee, Jong-Hoon Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon Jeong, Hyun-Jin Kim, Chunan Lee, Young-Sun Min, Inryul Lee, In-Mo Kim, Sunghoon Kim, Dongkyu Yoon, Ki-Sung Kim, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung:
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. ISSCC 2017: 202-203 - 2016
- [c2]Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong-Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, Hanjun Lee, Jaedoeg Yu, Nayoung Choi, Dong-Su Jang, Jeong-Don Ihm, Doo-Gon Kim, Young-Sun Min, Moosung Kim, Ansoo Park, Jae-Ick Son, In-Mo Kim, Pansuk Kwak, Bong-Kil Jung, Doosub Lee, Hyunggon Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers. ISSCC 2016: 130-131 - 2012
- [j1]Chulbum Kim, Jinho Ryu, Tae-Sung Lee, Hyunggon Kim, Jaewoo Lim, Jaeyong Jeong, Seonghwan Seo, Hongsoo Jeon, Bokeun Kim, Inyoul Lee, Dooseop Lee, Pansuk Kwak, Seongsoon Cho, Yongsik Yim, Changhyun Cho, Woopyo Jeong, Kwang-Il Park, Jin-Man Han, Duheon Song, Kyehyun Kyung, Youngho Lim, Young-Hyun Jun:
A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface. IEEE J. Solid State Circuits 47(4): 981-989 (2012) - 2010
- [c1]Hyunggon Kim, Jung-Hoon Park, Ki-Tae Park, Pansuk Kwak, Ohsuk Kwon, Chulbum Kim, Younyeol Lee, Sangsoo Park, Kyungmin Kim, Doohyun Cho, Juseok Lee, Jungho Song, Soowoong Lee, Hyukjun Yoo, Sanglok Kim, Seungwoo Yu, Sungjun Kim, Sungsoo Lee, Kyehyun Kyung, Yong-Ho Lim, Chilhee Chung:
A 159mm2 32nm 32Gb MLC NAND-flash memory with 200MB/s asynchronous DDR interface. ISSCC 2010: 442-443
Coauthor Index
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