Effects of electromagnetic near-field stress on SiGe HBT's reliability.

Thu, 01 Jan 2009 00:00:00 +0100

Ali Alaeddine, Moncef Kadi, Kaouther Daoud, B. Mazari:
Effects of electromagnetic near-field stress on SiGe HBT's reliability. Microelectron. Reliab. 49(9-11): 1029-1032 (2009)