Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs.

Wed, 01 Jan 2020 00:00:00 +0100

Chaymaa Haloui, Gaëtan Toulon, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, Karine Isoird, Frédéric Morancho, Mathieu Gavelle:
Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs. MIXDES 2020: 181-184