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2020 – today
- 2023
[j8]Masaru Sato, Yusuke Kumazaki, Naoya Okamoto, Toshihiro Ohki, Naoko Kurahashi, Masato Nishimori, Atsushi Yamada, Junji Kotani, Naoki Hara, Keiji Watanabe:
Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier. IEICE Trans. Electron. 106(10): 605-613 (2023)- [j7]Yusuke Kumazaki, Shiro Ozaki, Naoya Okamoto, Naoki Hara, Yasuhiro Nakasha, Masaru Sato, Toshihiro Ohki:
High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. IEICE Trans. Electron. 106(11): 661-668 (2023)
2010 – 2019
- 2017
- [j6]Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin:
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers. IEICE Trans. Electron. 100-C(5): 417-423 (2017) - 2016
- [j5]Hiroshi Matsumura, Yoichi Kawano, Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Taisuke Iwai, Naoki Hara:
300-GHz Amplifier in 75-nm InP HEMT Technology. IEICE Trans. Electron. 99-C(5): 528-534 (2016) - 2015
- [j4]Naoki Hara:
Foreword. IEICE Trans. Electron. 98-C(5): 381 (2015) - [j3]Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Yoichi Kawano, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Taisuke Iwai, Naoki Hara:
Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis. IEICE Trans. Electron. 98-C(12): 1112-1119 (2015) - 2013
- [c1]Masaru Sato, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara:
Submillimeter-wave InP HEMT amplifiers with current-reuse topology. RWS 2013: 250-252 - 2011
- [j2]Yasuhiro Nakasha, Naoki Hara, Kiyomichi Araki:
Performance Analysis of a 10-Gb/s Millimeter-Wave Impulse Radio Transmitter. IEICE Trans. Electron. 94-C(10): 1557-1564 (2011)
2000 – 2009
- 2001
- [j1]Hisao Shigematsu, Masaru Sato, Toshihide Suzuki, Tsuyoshi Takahashi, Kenji Imanishi, Naoki Hara, Hiroaki Ohnishi, Yuu Watanaba:
A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs. IEEE J. Solid State Circuits 36(9): 1309-1313 (2001)
Coauthor Index
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