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2010 – 2019
- 2019
[j9]Giovanni V. Resta
, Alessandra Leonhardt, Yashwanth Balaji, Stefan De Gendt, Pierre-Emmanuel Gaillardon, Giovanni De Micheli:
Devices and Circuits Using Novel 2-D Materials: A Perspective for Future VLSI Systems. IEEE Trans. Very Large Scale Integr. Syst. 27(7): 1486-1503 (2019)- 2014
- [j8]Sharifah Wan Muhamad Hatta, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Norhayati Soin, Ben Kaczer, Stefan De Gendt, Guido Groeseneken:
Energy distribution of positive charges in high-k dielectric. Microelectron. Reliab. 54(9-10): 2329-2333 (2014) - 2013
- [j7]Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt:
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors. Microelectron. Reliab. 53(6): 867-871 (2013)
2000 – 2009
- 2007
- [j6]Z. Li, Tom Schram, Luigi Pantisano, A. Stesmans, Thierry Conard, S. Shamuilia, V. V. Afanasiev, A. Akheyar, Sven Van Elshocht, D. P. Brunco, W. Deweerd, Y. Naoki, P. Lehnen, Stefan De Gendt, Kristin De Meyer:
Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks. Microelectron. Reliab. 47(4-5): 518-520 (2007) - [j5]M. Houssa, Marc Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns:
Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling. Microelectron. Reliab. 47(6): 880-889 (2007) - 2005
- [j4]G. S. Lujan, Wim Magnus, L.-Å. Ragnarsson, S. Kubicek, Stefan De Gendt, Marc M. Heyns, Kristin De Meyer:
Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance. Microelectron. Reliab. 45(5-6): 794-797 (2005) - [j3]Vidya Kaushik, Martine Claes, Annelies Delabie, Sven Van Elshocht, Olivier Richard, Thierry Conard, Erika Rohr, Thomas Witters, Matty Caymax, Stefan De Gendt:
Observation and characterization of defects in HfO2 high-K gate dielectric layers. Microelectron. Reliab. 45(5-6): 798-801 (2005) - 2001
- [j2]C. Zhao, G. Roebben, H. Bender, E. Young, S. Haukka, M. Houssa, M. Naili, Stefan De Gendt, Marc M. Heyns, Omer Van der Biest:
In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction. Microelectron. Reliab. 41(7): 995-998 (2001)
1990 – 1999
- 1999
- [j1]Marc M. Heyns, Twan Bearda, Ingrid Cornelissen, Stefan De Gendt, Robin Degraeve, Guido Groeseneken, Conny Kenens, D. Martin Knotter, Lee M. Loewenstein, Paul W. Mertens, Sofie Mertens, Marc Meuris, Tanya Nigam, Marc Schaekers, Ivo Teerlinck, Wilfried Vandervorst, Rita Vos, Klaus Wolke:
Cost-effective cleaning and high-quality thin gate oxides. IBM J. Res. Dev. 43(3): 339-350 (1999)
Coauthor Index
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