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Jean-Claude de Jaeger

J.-C. de Jaeger

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2010 – 2019

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2018
[c2]
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  - conf/essderc/CozetteLDRJCM18
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  - https://dblp.org/rec/conf/essderc/CozetteLDRJCM18
Flavien Cozette, Marie Lesecq, Nicolas Defrance, Michel Rousseau, Jean-Claude de Jaeger, Adrien Cutivet, Hassan Maher:
Temperature monitoring of short-gate length AlGaN/GaN HEMT via an integrated sensor. ESSDERC 2018: 134-137
2016
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  - journals/mr/LakhdharLCDLJM16
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H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert:
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectron. Reliab. 64: 594-598 (2016)
2013
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Alain Agboton, Nicolas Defrance, Phillipe Altuntas, Vannessa Avramovic, Adrien Cutivet, Rezky Ouhachi, Jean-Claude de Jaeger, Samira Bouzid-Driad, Hassan Maher, Michel Renvoise, Peter Frijlink:
Electron delay analysis and image charge effect in AlGaN/GaN HEMT on silicon substrate. ESSDERC 2013: 57-60

2000 – 2009

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2009
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  - journals/mr/MalbertLCSHJDDDOBBC09
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Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui:
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. Microelectron. Reliab. 49(9-11): 1216-1221 (2009)
2007
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Brahim Benbakhti, Michel Rousseau, J.-C. de Jaeger:
Physical study of the dissipated power area in high electron mobility transistors for thermal modelling. Microelectron. J. 38(1): 7-13 (2007)
2001
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  - journals/vlsi/RousseauJ01
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Michel Rousseau, J.-C. de Jaeger:
2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors. VLSI Design 13(1-4): 323-328 (2001)

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