BibTeX records: A. Lauwers

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@inproceedings{DBLP:conf/esscirc/ChiarellaWMKDRO09,
  author    = {Thomas Chiarella and
               Liesbeth Witters and
               Abdelkarim Mercha and
               Christoph Kerner and
               Rok Dittrich and
               Michal Rakowski and
               Claude Ortolland and
               Lars{-}{\AA}ke Ragnarsson and
               Bertrand Parvais and
               A. De Keersgieter and
               S. Kubicek and
               A. Redolfi and
               R. Rooyackers and
               C. Vrancken and
               S. Brus and
               A. Lauwers and
               Philippe Absil and
               S. Biesemans and
               Thomas Y. Hoffmann},
  title     = {Migrating from planar to FinFET for further {CMOS} scaling: {SOI}
               or bulk?},
  booktitle = {35th European Solid-State Circuits Conference, {ESSCIRC} 2009, Athens,
               Greece, 14-18 September 2009},
  pages     = {84--87},
  publisher = {{IEEE}},
  year      = {2009},
  url       = {https://doi.org/10.1109/ESSCIRC.2009.5325993},
  doi       = {10.1109/ESSCIRC.2009.5325993},
  timestamp = {Mon, 22 Feb 2021 00:00:00 +0100},
  biburl    = {https://dblp.org/rec/conf/esscirc/ChiarellaWMKDRO09.bib},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
@article{DBLP:journals/mr/RothschildMKSEDCRVVVLBDJNAB07,
  author    = {A. Rothschild and
               R. Mitsuhashi and
               Christoph Kerner and
               X. Shi and
               J. L. Everaert and
               L. Date and
               Thierry Conard and
               Olivier Richard and
               C. Vrancken and
               R. Verbeeck and
               Anabela Veloso and
               A. Lauwers and
               M. de Potter de ten Broeck and
               I. Debusschere and
               M. Jurczak and
               M. Niwa and
               Philippe Absil and
               S. Biesemans},
  title     = {Optimization of HfSiON using a design of experiment {(DOE)} approach
               on 0.45 {V} V\({}_{\mbox{t}}\) Ni-FUSI {CMOS} transistors},
  journal   = {Microelectron. Reliab.},
  volume    = {47},
  number    = {4-5},
  pages     = {521--524},
  year      = {2007},
  url       = {https://doi.org/10.1016/j.microrel.2007.01.042},
  doi       = {10.1016/j.microrel.2007.01.042},
  timestamp = {Wed, 17 Feb 2021 00:00:00 +0100},
  biburl    = {https://dblp.org/rec/journals/mr/RothschildMKSEDCRVVVLBDJNAB07.bib},
  bibsource = {dblp computer science bibliography, https://dblp.org}
}
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