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ORCIDNadine Collaert
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2020 – today
- 2024
[c29]Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, A. Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert:
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. IRPS 2024: 1-9- 2023
- [c28]Rana ElKashlan, Hao Yu, Ahmad Khaled, Sachin Yadav, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert
, Piet Wambacq, Bertrand Parvais:
A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs. ESSDERC 2023: 152-155 - 2022
- [c27]Abhitosh Vais, Sachin Yadav, Yves Mols, Bjorn Vermeersch, Komal Vondkar Kodandarama, Marina Baryshnikova, G. Mannaert, R. Alcotte, Geert Boccardi, Piet Wambacq, Bertrand Parvais, R. Langer, Bernardette Kunert, Nadine Collaert:
III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance. ESSDERC 2022: 261-264 - [c26]AliReza Alian, Raúl Rodríguez, Sachin Yadav, Uthayasankaran Peralagu, Arturo Sibaja Hernandez, Vamsi Putcha, Ming Zhao, Rana ElKashlan, Bjorn Vermeersch, Hao Yu, Erik Bury, Ahmad Khaled, Nadine Collaert, Bertrand Parvais:
Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. ESSDERC 2022: 384-387 - [c25]Vamsi Putcha, Hao Yu, Jacopo Franco, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert:
Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications. IRPS 2022: 11 - [c24]Michaël Peeters, S. Sinha, Xiao Sun, Claude Desset, Giuseppe Gramegna, John Slabbekoorn, Pieter Bex, N. Pinho, Tomas Webers, Dimitrios Velenis, A. Miller, Nadine Collaert, Geert Van der Plas, Eric Beyne, M. Huynen, R. Broucke:
(Why do we need) Wireless Heterogeneous Integration (anyway?). VLSI Technology and Circuits 2022: 256-257 - 2021
- [c23]Pieter Cardinael, Sachin Yadav, Ming Zhao, Martin Rack, Dimitri Lederer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin:
Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates. ESSDERC 2021: 303-306 - [c22]Claude Desset, Nadine Collaert, Siddhartha Sinha, Giuseppe Gramegna:
InP / CMOS co-integration for energy efficient sub-THz communication systems. GLOBECOM (Workshops) 2021: 1-6 - [c21]Sachin Yadav, Pieter Cardinael, Ming Zhao, Komal Vondkar, Uthayasankaran Peralagu, AliReza Alian, Ahmad Khaled, Sergej Makovejev, Enrique Ekoga, Dimitri Lederer, Jean-Pierre Raskin, Bertrand Parvais, Nadine Collaert:
CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. ICICDT 2021: 1-4 - [c20]Vamsi Putcha, Liang Cheng, AliReza Alian, Ming Zhao, Hai Lu, Bertrand Parvais, Niamh Waldron, Dimitri Linten, Nadine Collaert:
On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices. IRPS 2021: 1-8 - [c19]Abhitosh Vais, Brent Hsu, Olga Syshchyk, Hao Yu, AliReza Alian, Yves Mols, Komal Vondkar Kodandarama, Bernardette Kunert, Niamh Waldron, Eddy Simoen, Nadine Collaert:
A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies. IRPS 2021: 1-5 - 2020
- [c18]Vamsi Putcha, Erik Bury, Jacopo Franco, Amey Walke, Simeng Zhao, Uthayasankaran Peralagu, Ming Zhao, AliReza Alian, Ben Kaczer, Niamh Waldron, Dimitri Linten, Bertrand Parvais, Nadine Collaert:
Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications. IRPS 2020: 1-8 - [c17]Nadine Collaert:
1.3 Future Scaling: Where Systems and Technology Meet. ISSCC 2020: 25-29
2010 – 2019
- 2019
- [c16]Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer:
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS 2019: 1-7 - [c15]Dongyang Yan, Mark Ingels, Giovanni Mangraviti, Yao Liu, Bertrand Parvais, Niamh Waldron, Nadine Collaert, Piet Wambacq:
Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications. NEWCAS 2019: 1-4 - 2018
- [c14]Bertrand Parvais, Geert Hellings, Marko Simicic, Pieter Weckx, Jérôme Mitard, Doyoung Jang, V. Deshpande, B. van Liempc, Anabela Veloso, A. Vandooren, Niamh Waldron, Piet Wambacq, Nadine Collaert, Diederik Verkest:
Scaling CMOS beyond Si FinFET: an analog/RF perspective. ESSDERC 2018: 158-161 - [c13]A. Vandooren, Liesbeth Witters, Jacopo Franco, Arindam Mallik, Bertrand Parvais, Z. Wu, Amey Walke, V. Deshpande, E. Rosseel, Andriy Hikavyy, W. Li, L. Peng, Nouredine Rassoul, Geraldine Jamieson, Fumihiro Inoue, G. Verbinnen, Katia Devriendt, Lieve Teugels, N. Heylen, E. Vecchio, T. Zheng, Niamh Waldron, Vincent De Heyn, Dan Mocuta, Nadine Collaert:
Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling. ICICDT 2018: 145-148 - 2016
- [c12]Devin Verreck, Anne S. Verhulst, Bart Soree, Nadine Collaert, Anda Mocuta, Aaron Thean, Guido Groeseneken:
Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors. ESSDERC 2016: 412-415 - [c11]Nadine Collaert, AliReza Alian, Hiroaki Arimura, Geert Boccardi, Geert Eneman, Jacopo Franco, Tsvetan Ivanov, Dennis Lin, Jérôme Mitard, S. Ramesh, R. Rooyackers, Marc Schaekers, A. Sibaya-Hernandez, S. Sioncke, Quentin Smets, Abhitosh Vais, A. Vandooren, Anabela Veloso, Anne S. Verhulst, Devin Verreck, Niamh Waldron, Amey Walke, Liesbeth Witters, H. Yu, X. Zhou, Aaron Voon-Yew Thean:
Beyond-Si materials and devices for more Moore and more than Moore applications. ICICDT 2016: 1-5 - 2015
- [c10]Praveen Raghavan, Marie Garcia Bardon, Doyoung Jang, P. Schuddinck, Dmitry Yakimets, Julien Ryckaert, Abdelkarim Mercha, Naoto Horiguchi, Nadine Collaert, Anda Mocuta, Dan Mocuta, Zsolt Tokei, Diederik Verkest, Aaron Thean, An Steegen:
Holisitic device exploration for 7nm node. CICC 2015: 1-5 - [c9]Geert Eneman, An De Keersgieter, Anda Mocuta, Nadine Collaert, Aaron Thean:
FinFET stressor efficiency on alternative wafer and channel orientations for the 14 nm node and below. ICICDT 2015: 1-4 - [c8]Dmitry Yakimets, Doyoung Jang, Praveen Raghavan, Geert Eneman, Hans Mertens, P. Schuddinck, Arindam Mallik, Marie Garcia Bardon, Nadine Collaert, Abdelkarim Mercha, Diederik Verkest, Aaron Thean, Kristin De Meyer:
Lateral NWFET optimization for beyond 7nm nodes. ICICDT 2015: 1-4 - [c7]Zhigang Ji, Dimitri Linten, Roman Boschke, Geert Hellings, S. H. Chen, AliReza Alian, D. Zhou, Yves Mols, Tsvetan Ivanov, Jacopo Franco, Ben Kaczer, X. Zhang, R. Gao, Jianfu Zhang, Weidong Zhang, Nadine Collaert, Guido Groeseneken:
ESD characterization of planar InGaAs devices. IRPS 2015: 3 - [c6]Abhitosh Vais, Koen Martens, Jacopo Franco, Dennis Lin, AliReza Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer:
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices. IRPS 2015: 5 - 2014
- [j4]Maria Glória Caño de Andrade, João Antonio Martino, Marc Aoulaiche, Nadine Collaert, Eddy Simoen, Cor Claeys:
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectron. Reliab. 54(11): 2349-2354 (2014) - [c5]Trong Huynh Bao, Dmitry Yakimets, Julien Ryckaert, Ivan Ciofi, Rogier Baert, Anabela Veloso, Jürgen Bömmels, Nadine Collaert, Philippe Roussel, S. Demuynck, Praveen Raghavan, Abdelkarim Mercha, Zsolt Tokei, Diederik Verkest, Aaron Thean, Piet Wambacq:
Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologies. ESSDERC 2014: 102-105 - [c4]Giulia Piccolo, Piet I. Kuindersma, Lars-Åke Ragnarsson, Raymond J. E. Hueting, Nadine Collaert, Jurriaan Schmitz:
Silicon LEDs in FinFET technology. ESSDERC 2014: 274-277 - 2012
- [j3]Valeria Kilchytska, Joaquín Alvarado, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, Otilia Militaru, Guy Berger, Denis Flandre:
High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs. Microelectron. Reliab. 52(1): 118-123 (2012) - 2011
- [c3]Roeland Huys, Dries Braeken, Liesbeth Micholt, Danny Jans, Andim Stassen, Nadine Collaert, Josine Loo, Carmen Bartic, Kris Verstreken, Wolfgang Eberle:
Micro-sized syringes for single-cell fluidic access integrated on a micro-electrode array CMOS chip. EMBC 2011: 7650-7653 - 2010
- [j2]Pavel Poliakov, Ankur Anchlia, Marie Garcia Bardon, Bram Rooseleer, Bart De Wachter, Nadine Collaert, Koen van der Zanden, Wim Dehaene, Diederik Verkest, Miguel Corbalan Miranda:
Circuit Design for Bias Compatibility in Novel FinFET-Based Floating-Body RAM. IEEE Trans. Circuits Syst. II Express Briefs 57-II(3): 183-187 (2010)
2000 – 2009
- 2009
- [c2]Abhisek Dixit, Anirban Bandhyopadhyay, Nadine Collaert, Kristin De Meyer, Malgorzata Jurczak:
Measurement and Analysis of Parasitic Capacitance in FinFETs with High-k Dielectrics and Metal-Gate Stack. VLSI Design 2009: 253-258 - 2008
- [c1]Piet Wambacq, Abdelkarim Mercha, Karen Scheir, Bob Verbruggen, Jonathan Borremans, Vincent De Heyn, Steven Thijs, Dimitri Linten, Geert Van der Plas, Bertrand Parvais, Morin Dehan, Stefaan Decoutere, Charlotte Soens, Nadine Collaert, Malgorzata Jurczak:
Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies. ISSCC 2008: 528-529 - 2007
- [j1]Piet Wambacq, Bob Verbruggen, Karen Scheir, Jonathan Borremans, Morin Dehan, Dimitri Linten, Vincent De Heyn, Geert Van der Plas, Abdelkarim Mercha, Bertrand Parvais, Cedric Gustin, Vaidyanathan Subramanian, Nadine Collaert, Malgorzata Jurczak, Stefaan Decoutere:
The Potential of FinFETs for Analog and RF Circuit Applications. IEEE Trans. Circuits Syst. I Regul. Pap. 54-I(11): 2541-2551 (2007)
Coauthor Index
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