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Toshio Takeshima

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1990 – 1999

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1996
[j1]
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  - journals/jssc/OhkawaSSTNKOTO96
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Masayoshi Ohkawa, Hiroshi Sugawara, Naoaki Sudo, Masaru Tsukiji, Ken-ichiro Nakagawa, Masato Kawata, Ken-ichi Oyama, Toshio Takeshima, Shuichi Ohya:
A 98 mm² die size 3.3-V 64-Mb flash memory with FN-NOR type four-level cell. IEEE J. Solid State Circuits 31(11): 1584-1589 (1996)
1990
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Hiroki Koike, Toshio Takeshima, Masahide Takada:
A BIST scheme using microprogram ROM for large capacity memories. ITC 1990: 815-822

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