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ORCIDHyungjin Kim 0001
Person information
- affiliation: Inha University, Department of Electrical Engineering, Incheon, South Korea
- affiliation (2019 - 2020): Yeungnam University, Department of Electrical Engineering, Gyeongsan, South Korea
- affiliation (2018 - 2019): University of California Santa Barbara, Department of Electrical and Computer Engineering, CA, USA
- affiliation (PhD 2017): Seoul National University, Department of Electrical and Computer Engineering, South Korea
- not to be confused with: Hyungjin Kim 0004
Other persons with the same name
- Hyungjin Kim (aka: Hyung-jin Kim, Hyung-Jin Kim) — disambiguation page
- Hyungjin Kim 0002 — Korea Advanced Institute of Science and Technology, Urban Robotics Lab, Daejeon, South Korea
- Hyungjin Kim 0003 — University of California Los Angeles, CA, USA
- Hyungjin Kim 0004
![[0009-0002-3409-2081]](https://dblp.org/img/orcid-mark.12x12.png "0009-0002-3409-2081")
— Inha University, Department of Electrical and Computer Engineering, Incheon, South Korea
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2020 – today
- 2024
[j13]Sungjoon Kim, Kyungho Hong, Hyungjin Kim, Min-Hwi Kim, Woo Young Choi:
Overshoot-Suppressed Memristor Array with AlN Oxygen Barrier for Low-Power Operation in the Intelligent Neuromorphic Systems. Adv. Intell. Syst. 6(8) (2024)- [j12]Sangwook Youn, Yeongjin Hwang, Tae-Hyeon Kim, Sungjoon Kim, Hwiho Hwang, Jinwoo Park, Hyungjin Kim:
Threshold learning algorithm for memristive neural network with binary switching behavior. Neural Networks 176: 106355 (2024) - 2023
- [j11]Sangwook Youn, Sungjoon Kim, Tae-Hyeon Kim, Jinwoo Park, Hyungjin Kim:
Memristor Crossbar Circuit for Ternary Content-Addressable Memory with Fine-Tuning Operation. Adv. Intell. Syst. 5(3) (2023) - [j10]Min Suk Song, Tae-Hyeon Kim, Hwiho Hwang, Suhyeon Ahn, Hussein Nili, Hyungjin Kim:
Optimization of Random Telegraph Noise Characteristics in Memristor for True Random Number Generator. Adv. Intell. Syst. 5(5) (2023) - 2022
- [j9]Sungjoon Kim, Jinwoo Park, Tae-Hyeon Kim, Kyungho Hong, Yeongjin Hwang, Byung-Gook Park, Hyungjin Kim:
4-bit Multilevel Operation in Overshoot Suppressed Al2O3/TiOx Resistive Random-Access Memory Crossbar Array. Adv. Intell. Syst. 4(9) (2022) - 2021
- [j8]Dayoung Kim, Tae-Hyeon Kim, Yun-Yeong Choi, Geun Ho Lee, Jungwon Lee, Wookyung Sun, Byung-Gook Park, Hyungjin Kim, Hyungsoon Shin:
Selected Bit-Line Current PUF: Implementation of Hardware Security Primitive Based on a Memristor Crossbar Array. IEEE Access 9: 120901-120910 (2021) - 2020
- [j7]Jun Tae Jang, Jungi Min, Yeongjin Hwang, Sung-Jin Choi, Dong Myong Kim, Hyungjin Kim, Dae Hwan Kim:
Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System. IEEE Access 8: 192304-192311 (2020)
2010 – 2019
- 2019
- [c1]Irina Kataeva, Shigeki Ohtsuka, Hussein Nili, Hyungjin Kim, Yoshihiko Isobe, Koichi Yako, Dmitri B. Strukov:
Towards the Development of Analog Neuromorphic Chip Prototype with 2.4M Integrated Memristors. ISCAS 2019: 1-5 - [i1]Hyungjin Kim, Hussein Nili, Mahmood Mahmoodi, Dmitri B. Strukov:
4K-Memristor Analog-Grade Passive Crossbar Circuit. CoRR abs/1906.12045 (2019) - 2013
- [j6]Min-Chul Sun, Sang Wan Kim, Garam Kim, Hyun Woo Kim, Hyungjin Kim, Byung-Gook Park:
Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel. IEICE Trans. Electron. 96-C(5): 639-643 (2013) - 2012
- [j5]Seongjae Cho, Hyungjin Kim, Min-Chul Sun, In Man Kang, Byung-Gook Park, James S. Harris Jr.:
Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance. IEICE Electron. Express 9(9): 828-833 (2012) - [j4]Hyungjin Kim, Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Byung-Gook Park:
Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region. IEICE Trans. Electron. 95-C(5): 820-825 (2012) - [j3]Min-Chul Sun, Hyun Woo Kim, Sang Wan Kim, Garam Kim, Hyungjin Kim, Byung-Gook Park:
Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors. IEICE Trans. Electron. 95-C(5): 826-830 (2012) - [j2]Se Hwan Park, Yoon Kim, Wandong Kim, Joo Yun Seo, Hyungjin Kim, Byung-Gook Park:
Novel Three Dimensional (3D) NAND Flash Memory Array Having Tied Bit-line and Ground Select Transistor (TiGer). IEICE Trans. Electron. 95-C(5): 837-841 (2012) - [j1]Kyung-Chang Ryoo, Jeong-Hoon Oh, Sunghun Jung, Hyungjin Kim, Byung-Gook Park:
Effects of Conductive Defects on Unipolar RRAM for the Improvement of Resistive Switching Characteristics. IEICE Trans. Electron. 95-C(5): 842-846 (2012)
Coauthor Index
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