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"InAlN/GaN HEMTs on Si with 0.18-Ω•mm Contact Resistance and ..."

Yang Jiang et al. (2021)

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DOI: 10.1109/ASICON52560.2021.9620249

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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  dblp key:
  - conf/asicon/JiangDQCHTLWWY21
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  - https://dblp.org/rec/conf/asicon/JiangDQCHTLWWY21
Yang Jiang, Fangzhou Du, Zepeng Qiao, Wei-Chih Cheng, Jiaqi He, Xinyi Tang, Feifei Liu, Lei Wen, Qing Wang, Hongyu Yu:
InAlN/GaN HEMTs on Si with 0.18-Ω•mm Contact Resistance and 2.1-A/mm Drain Current Density. ASICON 2021: 1-4

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