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"Analytical models for channel potential and drain current in AlGaN/GaN ..."

Haisheng Qian et al. (2017)

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DOI: 10.1109/ASICON.2017.8252459

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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  dblp key:
  - conf/asicon/QianHHZ0Z17
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Haisheng Qian, Guangxi Hu, Laigui Hu, Xing Zhou, Ran Liu, Li-Rong Zheng:
Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices. ASICON 2017: 249-251

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