"Dependency of current collapse on the device structure of GaN-based HEMTs."

Xingye Zhou et al. (2015)

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DOI: 10.1109/ASICON.2015.7516946

access: closed

type: Conference or Workshop Paper

metadata version: 2018-07-17

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Xingye Zhou, Zhihong Feng, Yuanjie Lv, Xin Tan, Yuangang Wang, Guodong Gu, Xubo Song, Peng Xu, Shaobo Dun, Shujun Cai:
Dependency of current collapse on the device structure of GaN-based HEMTs. ASICON 2015: 1-4

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