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"Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in ..."
Christoph Weimer et al. (2023)
- Christoph Weimer, Viktor Kazantsev, Markus Mäller, Michael Schröter:
Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs. BCICTS 2023: 249-252
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