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"Modeling well edge proximity effect on highly-scaled MOSFETs."

Yi-Ming Sheu et al. (2005)

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DOI: 10.1109/CICC.2005.1568798

access: closed

type: Conference or Workshop Paper

metadata version: 2021-01-14

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  - conf/cicc/SheuSYCWCL05
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Yi-Ming Sheu, Ke-Wei Su, Sheng-Jier Yang, Hsien-Te Chen, Chih-Chiang Wang, Ming-Jer Chen, S. Liu:
Modeling well edge proximity effect on highly-scaled MOSFETs. CICC 2005: 831-834

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