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"GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing ..."

J. Gao et al. (2018)

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DOI: 10.1109/DRC.2018.8442184

access: closed

type: Conference or Workshop Paper

metadata version: 2020-10-01

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J. Gao, Y. Jin, B. Xie, C. P. Wen, Y. Hao, M. Wang:
GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing Technology. DRC 2018: 1-2

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