"Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on ..."

Takamasa Kawanago et al. (2018)

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DOI: 10.1109/ESSDERC.2018.8486878

access: closed

type: Conference or Workshop Paper

metadata version: 2018-11-13

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Takamasa Kawanago, Tomoaki Oba, Ryo Ikoma, Hiroyuki Takagi, Shunri Oda:
Gated Four-Probe Method to Evaluate the Impact of SAM Gate Dielectric on Mobility in MoS2 FET. ESSDERC 2018: 118-121

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