"On the forming-free operation of HfOx based RRAM devices: Experiments and ..."

Boubacar Traore et al. (2013)

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DOI: 10.1109/ESSDERC.2013.6818846

access: closed

type: Conference or Workshop Paper

metadata version: 2021-05-05

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  - https://dblp.org/rec/conf/essderc/TraoreVMGNJBSFXN13
Boubacar Traore, Elisa Vianello, Gabriel Molas, Marc Gely, Jean-François Nodin, Eric Jalaguier, Philippe Blaise, Barbara De Salvo, Leonardo R. C. Fonseca, Kanhao Xue, Yoshio Nishi:
On the forming-free operation of HfOx based RRAM devices: Experiments and ab initio calculations. ESSDERC 2013: 170-173

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