"High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS ..."

David W. Berning et al. (2008)

> Home

Details and statistics

DOI: 10.1109/08IAS.2008.365

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-21

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/iasam/BerningDORH08
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/iasam/BerningDORH08
David W. Berning, Tam H. Duong, José M. Ortiz-Rodríguez, Angel Rivera-López, Allen R. Hefner Jr.:
High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules. IAS 2008: 1-7

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.