"Static Noise Margin in 16 nm FinFET 6T and 8T SRAM Cells for ..."

Lorenzo Stevenazzi, Andrea Baschirotto, Marcello De Matteis (2023)

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DOI: 10.1109/ICECS58634.2023.10382712

access: closed

type: Conference or Workshop Paper

metadata version: 2024-01-18

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Lorenzo Stevenazzi, Andrea Baschirotto, Marcello De Matteis:
Static Noise Margin in 16 nm FinFET 6T and 8T SRAM Cells for Compute-in-Memory. ICECS 2023: 1-4

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