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"Effect of High-k Passivation Layer on Electrical Properties of GaN ..."

Yutao Cai et al. (2019)

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DOI: 10.1109/ICICDT.2019.8790844

access: closed

type: Conference or Workshop Paper

metadata version: 2023-10-31

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  - https://dblp.org/rec/conf/icicdt/CaiWCLWZMTC19
Yutao Cai, Yang Wang, Miao Cui, Wen Liu, Huiqing Wen, Cezhou Zhao, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker:
Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices. ICICDT 2019: 1-5

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