"Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator ..."

Lauriane Contamin et al. (2022)

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DOI: 10.1109/IRPS48227.2022.9764571

access: closed

type: Conference or Workshop Paper

metadata version: 2022-05-10

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Lauriane Contamin, Mikaël Cassé, Xavier Garros, Fred Gaillard, Maud Vinet, Philippe Galy, André Juge, Emmanuel Vincent, Silvano De Franceschi, Tristan Meunier:
Fast Measurement of BTI on 28nm Fully Depleted Silicon-On-Insulator MOSFETs at Cryogenic Temperature down to 4K. IRPS 2022: 7

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