"Suppression of endurance-stressed data-retention failures of 40nm ..."

Shouhei Fukuyama et al. (2018)

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DOI: 10.1109/IRPS.2018.8353677

access: closed

type: Conference or Workshop Paper

metadata version: 2019-01-22

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Shouhei Fukuyama, Kazuki Maeda, Shinpei Matsuda, Ken Takeuchi, Ryutaro Yasuhara:
Suppression of endurance-stressed data-retention failures of 40nm TaOx-based ReRAM. IRPS 2018: 4-1

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