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"Role of electron and hole trapping in the degradation and breakdown of ..."

David Z. Gao et al. (2018)

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DOI: 10.1109/IRPS.2018.8353602

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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  dblp key:
  - conf/irps/GaoSESPL18
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David Z. Gao, Jack Strand, Al-Moatasem El-Sayed, Alexander L. Shluger, Andrea Padovani, Luca Larcher:
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films. IRPS 2018: 5

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