"Charge Loss Improvement in 3D Flash Memory by Molecular Oxidation of ..."

Pei-Ci Jhang et al. (2024)

> Home

Details and statistics

DOI: 10.1109/IRPS48228.2024.10529470

access: closed

type: Conference or Workshop Paper

metadata version: 2024-05-29

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/JhangLSYYCLLDL24
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/JhangLSYYCLLDL24
Pei-Ci Jhang, Chi-Pin Lu, Jung-Yu Shieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Hang-Ting Lue, Pei-Ying Du, Chih-Yuan Lu:
Charge Loss Improvement in 3D Flash Memory by Molecular Oxidation of Tunneling Oxide. IRPS 2024: 24

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.