"Investigation of Safe Operating Area on 4H-SiC 600V VDMOSFET with TLP and ..."

Chao-Yang Ke et al. (2023)

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DOI: 10.1109/IRPS48203.2023.10118299

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Chao-Yang Ke, Yu-Chia Tsui, Bing-Yue Tsui, Ming-Dou Ker:
Investigation of Safe Operating Area on 4H-SiC 600V VDMOSFET with TLP and UIS Test Methods. IRPS 2023: 1-4

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