"Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based ..."

Maria Ruzzarin et al. (2019)

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DOI: 10.1109/IRPS.2019.8720589

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury:
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). IRPS 2019: 1-5

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