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"Degradation of vertical GaN FETs under gate and drain stress."

Maria Ruzzarin et al. (2018)

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DOI: 10.1109/IRPS.2018.8353579

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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  dblp key:
  - conf/irps/RuzzarinMSMZSP18
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  - https://dblp.org/rec/conf/irps/RuzzarinMSMZSP18
Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Min Sun, Tomás Palacios:
Degradation of vertical GaN FETs under gate and drain stress. IRPS 2018: 4

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