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"Characterization of Early Breakdown of SiC MOSFET Gate Oxide by Voltage ..."

Yongju Zheng, Rahul R. Potera, Tony Witt (2021)

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DOI: 10.1109/IRPS46558.2021.9405196

access: closed

type: Conference or Workshop Paper

metadata version: 2021-05-05

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  dblp key:
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Yongju Zheng, Rahul R. Potera, Tony Witt:
Characterization of Early Breakdown of SiC MOSFET Gate Oxide by Voltage Ramp Tests. IRPS 2021: 1-5

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