"A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput."

Wanik Cho et al. (2025)

> Home

Details and statistics

DOI: 10.1109/ISSCC49661.2025.10904748

access: closed

type: Conference or Workshop Paper

metadata version: 2025-04-25

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/isscc/ChoJKJAGLCCKPAC25
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/isscc/ChoJKJAGLCCKPAC25
Wanik Cho, Chanhui Jeong, Jongwoo Kim, Jongseok Jung, Keunseon Ahn, Jayoon Goo, Sangkyu Lee, Kayoung Cho, Tei Cho, Dauni Kim, Gwan Park, Yushin Ahn, Sooyeol Chai, Gwihan Ko, Sunyoung Jung, Eunwoo Jo, Taehun Park, Jinhyun Ban, Cheoljoong Park, Jae Hyun Park, Sanghoon Oh, Sojin Jeong, Youngjun Kwak, Kyungsoo Jeong, Jinyeop Kim, Minchol Shin, Eunho Yang, Taisik Shin, Youngil Kim, Jiseong Mun, Chanyang Ryu, Huihyeon Park, Changwan Ha, Jong Tai Park, Peng Zhang, Sooyong Park, Rezaul Haque, Hang Tian, Sunghwa Ok, Wonbeom Choi, Junyoun Lim, Dongkyu Yoon, Sechun Park, Wonsun Park, Kichang Gwon, Seungpil Lee, Hwang Huh, Woopyo Jeong, Jungdal Choi:
A 321-Layer 2Tb 4b/cell 3D-NAND-Flash Memory with a 75MB/s Program Throughput. ISSCC 2025: 512-514

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.