Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"A configurable SRAM with constant-negative-level write buffer for ..."

Yuki Fujimura et al. (2010)

> Home

Details and statistics

DOI: 10.1109/ISSCC.2010.5433813

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/isscc/FujimuraHSSKTKFKNY10
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/isscc/FujimuraHSSKTKFKNY10
Yuki Fujimura, Osamu Hirabayashi, Takahiko Sasaki, Azuma Suzuki, Atsushi Kawasumi, Yasuhisa Takeyama, Keiichi Kushida, Gou Fukano, Akira Katayama, Yusuke Niki, Tomoaki Yabe:
A configurable SRAM with constant-negative-level write buffer for low-voltage operation with 0.149µm² cell in 32nm high-k metal-gate CMOS. ISSCC 2010: 348-349

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.