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"25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM ..."

Dong-Uk Lee et al. (2014)

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DOI: 10.1109/ISSCC.2014.6757501

access: closed

type: Conference or Workshop Paper

metadata version: 2020-10-11

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Dong-Uk Lee, Kyung Whan Kim, Kwan-Weon Kim, Hongjung Kim, Ju Young Kim, Young Jun Park, Jae Hwan Kim, Dae Suk Kim, Heat Bit Park, Jin Wook Shin, Jang Hwan Cho, Ki Hun Kwon, Min Jeong Kim, Jaejin Lee, Kunwoo Park, Byong-Tae Chung, Sung-Joo Hong:
25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV. ISSCC 2014: 432-433

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