"Analyzing the behavior of FinFET SRAMs with resistive defects."

Thiago Santos Copetti et al. (2017)

> Home

Details and statistics

DOI: 10.1109/VLSI-SOC.2017.8203483

access: closed

type: Conference or Workshop Paper

metadata version: 2017-12-20

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/vlsi/CopettiBMP17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/vlsi/CopettiBMP17
Thiago Santos Copetti, Tiago R. Balen, Guilherme Cardoso Medeiros, Letícia Maria Bolzani Poehls:
Analyzing the behavior of FinFET SRAMs with resistive defects. VLSI-SoC 2017: 1-6

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.